Integrated design of GaN-on-Si power devices and drivers
An all-GaN power chip is designed to meet the application requirements of high-frequency power modules. The chip integrates the driver circuit and 300 V power devices, which effectively reduces the parasitic inductance caused by the discrete package, and the integrated design can improve the chip�...
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| Format: | Article |
| Language: | zho |
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National Computer System Engineering Research Institute of China
2025-05-01
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| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000171621 |
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| _version_ | 1849417744596860928 |
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| author | Yan Zhangzhe Zhou Jianjun Kong Yuechan |
| author_facet | Yan Zhangzhe Zhou Jianjun Kong Yuechan |
| author_sort | Yan Zhangzhe |
| collection | DOAJ |
| description | An all-GaN power chip is designed to meet the application requirements of high-frequency power modules. The chip integrates the driver circuit and 300 V power devices, which effectively reduces the parasitic inductance caused by the discrete package, and the integrated design can improve the chip's noise immunity and reliability. The chip is prepared in GaN-on-Si process platform and adopts E/D mode IC design. The driver circuit of the chip has an output signal rise time of 4.3 ns and a fall time of 3.4 ns at a switching frequency of 2 MHz, and the power devices are able to work stably at 300 V. |
| format | Article |
| id | doaj-art-c1ce50f1607341ee9d92f7518f4e6e75 |
| institution | Kabale University |
| issn | 0258-7998 |
| language | zho |
| publishDate | 2025-05-01 |
| publisher | National Computer System Engineering Research Institute of China |
| record_format | Article |
| series | Dianzi Jishu Yingyong |
| spelling | doaj-art-c1ce50f1607341ee9d92f7518f4e6e752025-08-20T03:32:40ZzhoNational Computer System Engineering Research Institute of ChinaDianzi Jishu Yingyong0258-79982025-05-01515152010.16157/j.issn.0258-7998.2563243000171621Integrated design of GaN-on-Si power devices and driversYan Zhangzhe0Zhou Jianjun1Kong Yuechan2Nanjing Electronic Devices InstituteNanjing Electronic Devices InstituteNanjing Electronic Devices InstituteAn all-GaN power chip is designed to meet the application requirements of high-frequency power modules. The chip integrates the driver circuit and 300 V power devices, which effectively reduces the parasitic inductance caused by the discrete package, and the integrated design can improve the chip's noise immunity and reliability. The chip is prepared in GaN-on-Si process platform and adopts E/D mode IC design. The driver circuit of the chip has an output signal rise time of 4.3 ns and a fall time of 3.4 ns at a switching frequency of 2 MHz, and the power devices are able to work stably at 300 V.http://www.chinaaet.com/article/3000171621ganpower icsingle-channelgan-on-sie/d mode |
| spellingShingle | Yan Zhangzhe Zhou Jianjun Kong Yuechan Integrated design of GaN-on-Si power devices and drivers Dianzi Jishu Yingyong gan power ic single-channel gan-on-si e/d mode |
| title | Integrated design of GaN-on-Si power devices and drivers |
| title_full | Integrated design of GaN-on-Si power devices and drivers |
| title_fullStr | Integrated design of GaN-on-Si power devices and drivers |
| title_full_unstemmed | Integrated design of GaN-on-Si power devices and drivers |
| title_short | Integrated design of GaN-on-Si power devices and drivers |
| title_sort | integrated design of gan on si power devices and drivers |
| topic | gan power ic single-channel gan-on-si e/d mode |
| url | http://www.chinaaet.com/article/3000171621 |
| work_keys_str_mv | AT yanzhangzhe integrateddesignofganonsipowerdevicesanddrivers AT zhoujianjun integrateddesignofganonsipowerdevicesanddrivers AT kongyuechan integrateddesignofganonsipowerdevicesanddrivers |