Optical Gain Characteristics of BGaAs/GaP Quantum Wells
Light emitters integrated with Si platform are highly desirable for photonic integrated circuits, however, manufacturing them remains difficult. In this work, BGaAs/GaP quantum well (QW) structures are proposed as a promising solution of the challenge. These QWs can be grown on GaP&#x...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9132657/ |
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