Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO<sub>3</sub> Layers
Two-dimensional (2D) material-based resistive random-access memory (RRAM) has emerged as a promising solution for neuromorphic computing and computing-in-memory architectures. Compared to conventional metal-oxide-based RRAM, the novel 2D material-based RRAM devices demonstrate lower power consumptio...
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MDPI AG
2025-07-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/15/13/1033 |
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| author | Kai Liu Wengui Jiang Liang Zhou Yinkang Zhou Minghui Hu Yuchen Geng Yiyuan Zhang Yi Qiao Rongming Wang Yinghui Sun |
| author_facet | Kai Liu Wengui Jiang Liang Zhou Yinkang Zhou Minghui Hu Yuchen Geng Yiyuan Zhang Yi Qiao Rongming Wang Yinghui Sun |
| author_sort | Kai Liu |
| collection | DOAJ |
| description | Two-dimensional (2D) material-based resistive random-access memory (RRAM) has emerged as a promising solution for neuromorphic computing and computing-in-memory architectures. Compared to conventional metal-oxide-based RRAM, the novel 2D material-based RRAM devices demonstrate lower power consumption, higher integration density, and reduced performance variability, benefiting from their atomic-scale thickness and ultra-flat surfaces. Remarkably, 2D layered metal oxides retain these advantages while preserving the merits of traditional metal oxides, including their low cost and high environmental stability. Through a multi-step dry transfer process, we fabricated a Pd-MoO<sub>3</sub>-Ag RRAM device featuring 2D α-MoO<sub>3</sub> as the resistive switching layer, with Pd and Ag serving as inert and active electrodes, respectively. Resistive switching tests revealed an excellent operational stability, low write voltage (~0.5 V), high switching ratio (>10<sup>6</sup>), and multi-bit storage capability (≥3 bits). Nevertheless, the device exhibited a limited retention time (~2000 s). To overcome this limitation, we developed a Gr-MoO<sub>3</sub>-Ag heterostructure by substituting the Pd electrode with graphene (Gr). This modification achieved a fivefold improvement in the retention time (>10<sup>4</sup> s). These findings demonstrate that by controlling the type and thickness of 2D materials and resistive switching layers, RRAM devices with both high On/Off ratios and long-term data retention may be developed. |
| format | Article |
| id | doaj-art-c112759f17394c6f8d51e5c22e660e1f |
| institution | Kabale University |
| issn | 2079-4991 |
| language | English |
| publishDate | 2025-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj-art-c112759f17394c6f8d51e5c22e660e1f2025-08-20T03:50:21ZengMDPI AGNanomaterials2079-49912025-07-011513103310.3390/nano15131033Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO<sub>3</sub> LayersKai Liu0Wengui Jiang1Liang Zhou2Yinkang Zhou3Minghui Hu4Yuchen Geng5Yiyuan Zhang6Yi Qiao7Rongming Wang8Yinghui Sun9Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, ChinaBeijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, ChinaBeijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, ChinaBeijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, ChinaBeijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, ChinaBeijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, ChinaBeijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, ChinaThe State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, ChinaBeijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, ChinaBeijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, ChinaTwo-dimensional (2D) material-based resistive random-access memory (RRAM) has emerged as a promising solution for neuromorphic computing and computing-in-memory architectures. Compared to conventional metal-oxide-based RRAM, the novel 2D material-based RRAM devices demonstrate lower power consumption, higher integration density, and reduced performance variability, benefiting from their atomic-scale thickness and ultra-flat surfaces. Remarkably, 2D layered metal oxides retain these advantages while preserving the merits of traditional metal oxides, including their low cost and high environmental stability. Through a multi-step dry transfer process, we fabricated a Pd-MoO<sub>3</sub>-Ag RRAM device featuring 2D α-MoO<sub>3</sub> as the resistive switching layer, with Pd and Ag serving as inert and active electrodes, respectively. Resistive switching tests revealed an excellent operational stability, low write voltage (~0.5 V), high switching ratio (>10<sup>6</sup>), and multi-bit storage capability (≥3 bits). Nevertheless, the device exhibited a limited retention time (~2000 s). To overcome this limitation, we developed a Gr-MoO<sub>3</sub>-Ag heterostructure by substituting the Pd electrode with graphene (Gr). This modification achieved a fivefold improvement in the retention time (>10<sup>4</sup> s). These findings demonstrate that by controlling the type and thickness of 2D materials and resistive switching layers, RRAM devices with both high On/Off ratios and long-term data retention may be developed.https://www.mdpi.com/2079-4991/15/13/1033<i>α</i>-MoO<sub>3</sub> nanosheettwo-dimensional metal oxidesresistive switching layerresistive random access memorymultilevel storage |
| spellingShingle | Kai Liu Wengui Jiang Liang Zhou Yinkang Zhou Minghui Hu Yuchen Geng Yiyuan Zhang Yi Qiao Rongming Wang Yinghui Sun Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO<sub>3</sub> Layers Nanomaterials <i>α</i>-MoO<sub>3</sub> nanosheet two-dimensional metal oxides resistive switching layer resistive random access memory multilevel storage |
| title | Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO<sub>3</sub> Layers |
| title_full | Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO<sub>3</sub> Layers |
| title_fullStr | Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO<sub>3</sub> Layers |
| title_full_unstemmed | Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO<sub>3</sub> Layers |
| title_short | Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO<sub>3</sub> Layers |
| title_sort | multi bit resistive random access memory based on two dimensional moo sub 3 sub layers |
| topic | <i>α</i>-MoO<sub>3</sub> nanosheet two-dimensional metal oxides resistive switching layer resistive random access memory multilevel storage |
| url | https://www.mdpi.com/2079-4991/15/13/1033 |
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