Thin hafnia layer on silicon – Study of interfacial charging and charge transfer by resistometry and photoelectrochemistry
Oxide layers on silicon (Si) can effectively reduce the surface recombination velocity due to chemical and field-effect passivation, thereby increasing efficiency of PV devices. We propose simple experimental technique that provides information on interfacial Si/oxide charge. Here, interfacial charg...
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-02-01
|
| Series: | Electrochemistry Communications |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S1388248125000104 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Be the first to leave a comment!