TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs
The long-term reliability of AlGaN/GaN high electron mobility transistors (HEMTs) is a crucial factor in their widespread adoption for high-power and high-frequency applications. Before investigating the device behavior under high-temperature reverse-bias (HTRB) conditions, a fine tuning of the TCAD...
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-03-01
|
| Series: | Power Electronic Devices and Components |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772370425000057 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|