TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs
The long-term reliability of AlGaN/GaN high electron mobility transistors (HEMTs) is a crucial factor in their widespread adoption for high-power and high-frequency applications. Before investigating the device behavior under high-temperature reverse-bias (HTRB) conditions, a fine tuning of the TCAD...
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Elsevier
2025-03-01
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| Series: | Power Electronic Devices and Components |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772370425000057 |
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| author | Franco Ercolano Luigi Balestra Sebastian Krause Stefano Leone Isabel Streicher Patrik Waltereit Michael Dammann Susanna Reggiani |
| author_facet | Franco Ercolano Luigi Balestra Sebastian Krause Stefano Leone Isabel Streicher Patrik Waltereit Michael Dammann Susanna Reggiani |
| author_sort | Franco Ercolano |
| collection | DOAJ |
| description | The long-term reliability of AlGaN/GaN high electron mobility transistors (HEMTs) is a crucial factor in their widespread adoption for high-power and high-frequency applications. Before investigating the device behavior under high-temperature reverse-bias (HTRB) conditions, a fine tuning of the TCAD simulation setup was conducted by benchmarking against measured transfer, input, and output characteristics. This calibration step ensured an accurate representation of the device electrical performance, serving as a solid foundation for further TCAD stress analysis. Subsequently, the comparison between HTRB experimental results and the calibrated TCAD simulations was carried out to understand degradation mechanisms under stress conditions. The study particularly focuses on the role of passivation/cap interface traps, which are known to influence both the drain current (ID) and gate current (IG) over time. By varying key parameters such as trap density and energy levels, the impact of these traps on device performance is consistently explored. The simulations not only corroborate experimental findings but also provide deeper insights into the physical mechanisms driving current collapse, enabling more accurate predictions of long-term device behavior under high-stress conditions. These results contribute to the ongoing development of more reliable GaN-based technologies, emphasizing the importance of interface quality and trap management. |
| format | Article |
| id | doaj-art-c0e006450e0a44e29c72ae0dee792754 |
| institution | Kabale University |
| issn | 2772-3704 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Power Electronic Devices and Components |
| spelling | doaj-art-c0e006450e0a44e29c72ae0dee7927542025-02-10T04:35:28ZengElsevierPower Electronic Devices and Components2772-37042025-03-0110100080TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTsFranco Ercolano0Luigi Balestra1Sebastian Krause2Stefano Leone3Isabel Streicher4Patrik Waltereit5Michael Dammann6Susanna Reggiani7ARCES and DEI, Alma Mater Studiorum, University of Bologna, Viale del Risorgimento, 2, 40136, Bologna, Italy; Corresponding author.ARCES and DEI, Alma Mater Studiorum, University of Bologna, Viale del Risorgimento, 2, 40136, Bologna, ItalyFraunhofer Institute for Applied Solid State Physics IAF Tullastrasse 72, 79108 Freiburg, GermanyFraunhofer Institute for Applied Solid State Physics IAF Tullastrasse 72, 79108 Freiburg, GermanyFraunhofer Institute for Applied Solid State Physics IAF Tullastrasse 72, 79108 Freiburg, GermanyFraunhofer Institute for Applied Solid State Physics IAF Tullastrasse 72, 79108 Freiburg, GermanyFraunhofer Institute for Applied Solid State Physics IAF Tullastrasse 72, 79108 Freiburg, GermanyARCES and DEI, Alma Mater Studiorum, University of Bologna, Viale del Risorgimento, 2, 40136, Bologna, ItalyThe long-term reliability of AlGaN/GaN high electron mobility transistors (HEMTs) is a crucial factor in their widespread adoption for high-power and high-frequency applications. Before investigating the device behavior under high-temperature reverse-bias (HTRB) conditions, a fine tuning of the TCAD simulation setup was conducted by benchmarking against measured transfer, input, and output characteristics. This calibration step ensured an accurate representation of the device electrical performance, serving as a solid foundation for further TCAD stress analysis. Subsequently, the comparison between HTRB experimental results and the calibrated TCAD simulations was carried out to understand degradation mechanisms under stress conditions. The study particularly focuses on the role of passivation/cap interface traps, which are known to influence both the drain current (ID) and gate current (IG) over time. By varying key parameters such as trap density and energy levels, the impact of these traps on device performance is consistently explored. The simulations not only corroborate experimental findings but also provide deeper insights into the physical mechanisms driving current collapse, enabling more accurate predictions of long-term device behavior under high-stress conditions. These results contribute to the ongoing development of more reliable GaN-based technologies, emphasizing the importance of interface quality and trap management.http://www.sciencedirect.com/science/article/pii/S2772370425000057GaN HEMTsHEMTsAlGaN/GaNTCAD simulationReliabilityHTRB |
| spellingShingle | Franco Ercolano Luigi Balestra Sebastian Krause Stefano Leone Isabel Streicher Patrik Waltereit Michael Dammann Susanna Reggiani TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs Power Electronic Devices and Components GaN HEMTs HEMTs AlGaN/GaN TCAD simulation Reliability HTRB |
| title | TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs |
| title_full | TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs |
| title_fullStr | TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs |
| title_full_unstemmed | TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs |
| title_short | TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs |
| title_sort | tcad analysis of the high temperature reverse bias stress on algan gan hemts |
| topic | GaN HEMTs HEMTs AlGaN/GaN TCAD simulation Reliability HTRB |
| url | http://www.sciencedirect.com/science/article/pii/S2772370425000057 |
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