Impact of Total Ionizing Dose on Radio Frequency Performance of 22 nm Fully Depleted Silicon-On-Insulator nMOSFETs
In this paper, the degradation mechanism of the RF performance of 22 nm fully depleted (FD) silicon-on-insulator nMOSFETs at different total ionizing dose levels has been investigated. The RF figures of merit (the cut-off frequency <i>f<sub>T</sub></i>, maximum oscillation fr...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-10-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/15/11/1292 |
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| Summary: | In this paper, the degradation mechanism of the RF performance of 22 nm fully depleted (FD) silicon-on-insulator nMOSFETs at different total ionizing dose levels has been investigated. The RF figures of merit (the cut-off frequency <i>f<sub>T</sub></i>, maximum oscillation frequency <i>f<sub>max</sub></i>) show significant degradation of approximately 14.1% and 6.8%, respectively. The variation of the small-signal parameters (output conductance (<i>g<sub>ds</sub></i>), transconductance (<i>g<sub>m</sub></i>), reflection coefficient (|Γ<sub>in</sub>|), and capacitance (<i>C<sub>gg</sub></i>)) at different TID levels has been discussed. TID-induced trapped charges in the gate oxide and buried oxide increase the vertical channel field, which leads to more complex degradation of small-signal parameters across a wide frequency range. |
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| ISSN: | 2072-666X |