Extended Electrical and Photonic Characterization of GaN-Based Ultra-Violet MicroLEDs With an ITO Emission Window Layer

Extended Electrical and Photonic Characterization of GaN-Based Ultra-Violet MicroLEDs With an ITO Emission Window Layer

We determined the optical and electrical characteristics of GaN-based, ultraviolet micro light emitting diodes (microLEDs). Such microLEDs are essential to next-generation high-resolution micro-displays. Square-shaped microLEDs of different sizes (side lengths: 5–50 μm) were de...

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Main Authors: Yi-Lin Tsai, Sheng-Kai Huang, Huang-Hsiung Huang, Shu-Mei Yang, Kai-Ling Liang, Wei-Hung Kuo, Yen-Hsiang Fang, Chih-I Wu, Shou-Wei Wang, Hsiang-Yun Shih, Zhiyu Xu, Minkyu Cho, Shyh-Chiang Shen, Chien-Chung Lin
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Photonics Journal
Subjects:
GaN
micro LEDs
Ultra-violet emission
leakage current
Arrhenius plot
low temperature current-voltage characterization
Online Access:https://ieeexplore.ieee.org/document/9256288/
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Summary:We determined the optical and electrical characteristics of GaN-based, ultraviolet micro light emitting diodes (microLEDs). Such microLEDs are essential to next-generation high-resolution micro-displays. Square-shaped microLEDs of different sizes (side lengths: 5–50 μm) were designed. The peak emission wavelength of these devices shifted <0.15 nm during the current injection. The 50 μm device had a 3.8 times greater relative illumination intensity than did the 5 μm device, suggesting a degradation in quantum efficiency in small devices. Measurements of temperature-dependent reverse leakage current indicated (1) thermal activation from deep centers and (2) a high percentage of components with surface recombination current in the small devices.
ISSN:1943-0655

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