2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates
High voltage (∼2 kV) Al _0.64 Ga _0.36 N-channel high electron mobility transistors were fabricated with an on-resistance of ∼75 Ω. mm (∼21 mΩ. cm ^2 ). Two field plates of variable dimensions were utilized to optimize the breakdown voltage. The breakdown voltage reached >3 kV (tool limit) before...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
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| Online Access: | https://doi.org/10.35848/1882-0786/ad9db4 |
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| _version_ | 1841527635054690304 |
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| author | Md Tahmidul Alam Jiahao Chen Kenneth Stephenson Md Abdullah-Al Mamun Abdullah Al Mamun Mazumder Shubhra S. Pasayat Asif Khan Chirag Gupta |
| author_facet | Md Tahmidul Alam Jiahao Chen Kenneth Stephenson Md Abdullah-Al Mamun Abdullah Al Mamun Mazumder Shubhra S. Pasayat Asif Khan Chirag Gupta |
| author_sort | Md Tahmidul Alam |
| collection | DOAJ |
| description | High voltage (∼2 kV) Al _0.64 Ga _0.36 N-channel high electron mobility transistors were fabricated with an on-resistance of ∼75 Ω. mm (∼21 mΩ. cm ^2 ). Two field plates of variable dimensions were utilized to optimize the breakdown voltage. The breakdown voltage reached >3 kV (tool limit) before passivation however it reduced to ∼2 kV after Si _3 N _4 surface passivation and field plate deposition. The breakdown voltage and on-resistance demonstrated a strong linear correlation in a scattered plot of ∼50 measured transistors. The fabricated transistors were electrically characterized and benchmarked against the state-of-the-art high-voltage (> 1 kV) Al-rich (>40%) AlGaN-channel transistors in breakdown voltage and on-resistance, indicating significant progress. |
| format | Article |
| id | doaj-art-bf8dc0775c1840f0a53fca237654cbc5 |
| institution | Kabale University |
| issn | 1882-0786 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Applied Physics Express |
| spelling | doaj-art-bf8dc0775c1840f0a53fca237654cbc52025-01-15T12:11:34ZengIOP PublishingApplied Physics Express1882-07862025-01-0118101650410.35848/1882-0786/ad9db42 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field platesMd Tahmidul Alam0https://orcid.org/0009-0008-6556-839XJiahao Chen1Kenneth Stephenson2Md Abdullah-Al Mamun3Abdullah Al Mamun Mazumder4Shubhra S. Pasayat5Asif Khan6Chirag Gupta7Department of Electrical and Computer Engineering, University of Wisconsin-Madison , WI 53706, United States of AmericaDepartment of Electrical and Computer Engineering, University of Wisconsin-Madison , WI 53706, United States of AmericaDepartment of Electrical Engineering, University of South Carolina , Columbia, SC 29208, United States of AmericaDepartment of Electrical Engineering, University of South Carolina , Columbia, SC 29208, United States of AmericaDepartment of Electrical Engineering, University of South Carolina , Columbia, SC 29208, United States of AmericaDepartment of Electrical and Computer Engineering, University of Wisconsin-Madison , WI 53706, United States of AmericaDepartment of Electrical Engineering, University of South Carolina , Columbia, SC 29208, United States of AmericaDepartment of Electrical and Computer Engineering, University of Wisconsin-Madison , WI 53706, United States of AmericaHigh voltage (∼2 kV) Al _0.64 Ga _0.36 N-channel high electron mobility transistors were fabricated with an on-resistance of ∼75 Ω. mm (∼21 mΩ. cm ^2 ). Two field plates of variable dimensions were utilized to optimize the breakdown voltage. The breakdown voltage reached >3 kV (tool limit) before passivation however it reduced to ∼2 kV after Si _3 N _4 surface passivation and field plate deposition. The breakdown voltage and on-resistance demonstrated a strong linear correlation in a scattered plot of ∼50 measured transistors. The fabricated transistors were electrically characterized and benchmarked against the state-of-the-art high-voltage (> 1 kV) Al-rich (>40%) AlGaN-channel transistors in breakdown voltage and on-resistance, indicating significant progress.https://doi.org/10.35848/1882-0786/ad9db4AlGaN-channel HEMTUltrawide bandgap semiconductor devicehigh-voltage transistorpower semiconductor device |
| spellingShingle | Md Tahmidul Alam Jiahao Chen Kenneth Stephenson Md Abdullah-Al Mamun Abdullah Al Mamun Mazumder Shubhra S. Pasayat Asif Khan Chirag Gupta 2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates Applied Physics Express AlGaN-channel HEMT Ultrawide bandgap semiconductor device high-voltage transistor power semiconductor device |
| title | 2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates |
| title_full | 2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates |
| title_fullStr | 2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates |
| title_full_unstemmed | 2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates |
| title_short | 2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates |
| title_sort | 2 kv al0 64ga0 36n channel high electron mobility transistors with passivation and field plates |
| topic | AlGaN-channel HEMT Ultrawide bandgap semiconductor device high-voltage transistor power semiconductor device |
| url | https://doi.org/10.35848/1882-0786/ad9db4 |
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