Dielectric function and thermo-optic coefficients of silicon-doped GaN substrates at elevated temperature from 298 K to 873 K in the UV-Vis-NIR spectrum
Abstract Understanding the thermal influence on gallium nitride (GaN) single crystal substrates is critical for the advancement of GaN-based optoelectronic devices. In this study, we comprehensively characterized the thermal effects on the optical properties of silicon-doped GaN substrates using spe...
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Nature Portfolio
2025-02-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-025-87243-w |
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| author | Subiao Bian Xi Chen Changcai Cui |
| author_facet | Subiao Bian Xi Chen Changcai Cui |
| author_sort | Subiao Bian |
| collection | DOAJ |
| description | Abstract Understanding the thermal influence on gallium nitride (GaN) single crystal substrates is critical for the advancement of GaN-based optoelectronic devices. In this study, we comprehensively characterized the thermal effects on the optical properties of silicon-doped GaN substrates using spectroscopic ellipsometry over a broad wavelength range from 250 nm to 1600 nm. The dielectric function of GaN was determined at temperatures ranging from 298 K to 873 K, demonstrating consistent temperature-dependent behavior. The exciton transitions were precisely characterized and modeled using the empirical Varshni expression. Moreover, we report, for the first time, the thermo-optic coefficients across the wide spectrum, parameterized using a Sellmeier model. This work significantly expand the GaN optical properties database beyond thin films and provide essential insights for the design and optimization of next-generation GaN-based optoelectronic devices. |
| format | Article |
| id | doaj-art-bf4bfcfd17524f33afd5457bd210e0a4 |
| institution | Kabale University |
| issn | 2045-2322 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Nature Portfolio |
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| series | Scientific Reports |
| spelling | doaj-art-bf4bfcfd17524f33afd5457bd210e0a42025-02-09T12:28:11ZengNature PortfolioScientific Reports2045-23222025-02-011511810.1038/s41598-025-87243-wDielectric function and thermo-optic coefficients of silicon-doped GaN substrates at elevated temperature from 298 K to 873 K in the UV-Vis-NIR spectrumSubiao Bian0Xi Chen1Changcai Cui2College of Metrology Measurement and Instrument, China Jiliang UniversityInstitute of Manufacturing Engineering, Huaqiao UniversityCollege of Metrology Measurement and Instrument, China Jiliang UniversityAbstract Understanding the thermal influence on gallium nitride (GaN) single crystal substrates is critical for the advancement of GaN-based optoelectronic devices. In this study, we comprehensively characterized the thermal effects on the optical properties of silicon-doped GaN substrates using spectroscopic ellipsometry over a broad wavelength range from 250 nm to 1600 nm. The dielectric function of GaN was determined at temperatures ranging from 298 K to 873 K, demonstrating consistent temperature-dependent behavior. The exciton transitions were precisely characterized and modeled using the empirical Varshni expression. Moreover, we report, for the first time, the thermo-optic coefficients across the wide spectrum, parameterized using a Sellmeier model. This work significantly expand the GaN optical properties database beyond thin films and provide essential insights for the design and optimization of next-generation GaN-based optoelectronic devices.https://doi.org/10.1038/s41598-025-87243-w |
| spellingShingle | Subiao Bian Xi Chen Changcai Cui Dielectric function and thermo-optic coefficients of silicon-doped GaN substrates at elevated temperature from 298 K to 873 K in the UV-Vis-NIR spectrum Scientific Reports |
| title | Dielectric function and thermo-optic coefficients of silicon-doped GaN substrates at elevated temperature from 298 K to 873 K in the UV-Vis-NIR spectrum |
| title_full | Dielectric function and thermo-optic coefficients of silicon-doped GaN substrates at elevated temperature from 298 K to 873 K in the UV-Vis-NIR spectrum |
| title_fullStr | Dielectric function and thermo-optic coefficients of silicon-doped GaN substrates at elevated temperature from 298 K to 873 K in the UV-Vis-NIR spectrum |
| title_full_unstemmed | Dielectric function and thermo-optic coefficients of silicon-doped GaN substrates at elevated temperature from 298 K to 873 K in the UV-Vis-NIR spectrum |
| title_short | Dielectric function and thermo-optic coefficients of silicon-doped GaN substrates at elevated temperature from 298 K to 873 K in the UV-Vis-NIR spectrum |
| title_sort | dielectric function and thermo optic coefficients of silicon doped gan substrates at elevated temperature from 298 k to 873 k in the uv vis nir spectrum |
| url | https://doi.org/10.1038/s41598-025-87243-w |
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