Wafer‐Scale Synthesis of Topological Insulator Sb2Te3 Thin Films
Abstract Recently, metal‐organic chemical vapor deposition (MOCVD) has been proven successful to grow topological insulators such as antimony telluride (Sb2Te3), with their use as efficient spin‐charge converters at room temperature also being reported. On the other hand, a wafer‐scale synthesis of...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-06-01
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| Series: | Advanced Materials Interfaces |
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| Online Access: | https://doi.org/10.1002/admi.202400961 |
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| author | Ali Shafiei Ahmad Fathi Hafshejani Rehab M. G. Ahmed Alessio Lamperti Emanuele Longo Lorenzo Locatelli Christian Martella Alessandro Molle Graziella Tallarida Carlo Zucchetti Claudia Wiemer Massimo Longo Roberto Mantovan |
| author_facet | Ali Shafiei Ahmad Fathi Hafshejani Rehab M. G. Ahmed Alessio Lamperti Emanuele Longo Lorenzo Locatelli Christian Martella Alessandro Molle Graziella Tallarida Carlo Zucchetti Claudia Wiemer Massimo Longo Roberto Mantovan |
| author_sort | Ali Shafiei |
| collection | DOAJ |
| description | Abstract Recently, metal‐organic chemical vapor deposition (MOCVD) has been proven successful to grow topological insulators such as antimony telluride (Sb2Te3), with their use as efficient spin‐charge converters at room temperature also being reported. On the other hand, a wafer‐scale synthesis of Sb2Te3 thin films showing clear‐cut electrical conduction driven by topologically protected surface states is still missing. Within this work, the growth of Sb2Te3 thin films with variable thicknesses over 4‐inch (4″) wafer‐scale Si(111) substrates as conducted via MOCVD is reported. By performing magnetoconductance measurements, weak antilocalization phenomena are detected over the whole 4″ area, thus proving the possibility to produce wafer‐scale Sb2Te3 topological insulator thin films. Furthermore, comprehensive information on the variability of the functional properties of Sb2Te3 thin films with their morphological, chemical, and structural properties, as probed by scanning electron microscopy, X‐ray diffraction/reflectivity, atomic force microscopy, Raman spectroscopy, time‐of‐flight secondary ion mass spectrometry, and energy‐dispersive X‐ray analyses is reported. This work provides a breakthrough for the technology scale‐up of these novel materials to be employed in future spintronic devices as well as applications in nanoelectronics, thermoelectrics, and quantum computing. |
| format | Article |
| id | doaj-art-befdeea22f1546f0a7104a158b9acbd9 |
| institution | Kabale University |
| issn | 2196-7350 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj-art-befdeea22f1546f0a7104a158b9acbd92025-08-20T03:45:49ZengWiley-VCHAdvanced Materials Interfaces2196-73502025-06-011211n/an/a10.1002/admi.202400961Wafer‐Scale Synthesis of Topological Insulator Sb2Te3 Thin FilmsAli Shafiei0Ahmad Fathi Hafshejani1Rehab M. G. Ahmed2Alessio Lamperti3Emanuele Longo4Lorenzo Locatelli5Christian Martella6Alessandro Molle7Graziella Tallarida8Carlo Zucchetti9Claudia Wiemer10Massimo Longo11Roberto Mantovan12CNR‐IMM Unit of Agrate Brianza Via C. Olivetti 2 Agrate Brianza 20864 MB ItalyCNR‐IMM Unit of Agrate Brianza Via C. Olivetti 2 Agrate Brianza 20864 MB ItalyCNR‐IMM Unit of Agrate Brianza Via C. Olivetti 2 Agrate Brianza 20864 MB ItalyCNR‐IMM Unit of Agrate Brianza Via C. Olivetti 2 Agrate Brianza 20864 MB ItalyInstitute of Materials Science of Barcelona (ICMAB‐CSIC) Campus UAB Bellaterra 08193 Catalonia SpainCNR‐IMM Unit of Agrate Brianza Via C. Olivetti 2 Agrate Brianza 20864 MB ItalyCNR‐IMM Unit of Agrate Brianza Via C. Olivetti 2 Agrate Brianza 20864 MB ItalyCNR‐IMM Unit of Agrate Brianza Via C. Olivetti 2 Agrate Brianza 20864 MB ItalyCNR‐IMM Unit of Agrate Brianza Via C. Olivetti 2 Agrate Brianza 20864 MB ItalyPhysics Department Politecnico di Milano piazza Leonardo da Vinci 32 Milan 20133 ItalyCNR‐IMM Unit of Agrate Brianza Via C. Olivetti 2 Agrate Brianza 20864 MB ItalyCNR‐IMM Unit of Agrate Brianza Via C. Olivetti 2 Agrate Brianza 20864 MB ItalyCNR‐IMM Unit of Agrate Brianza Via C. Olivetti 2 Agrate Brianza 20864 MB ItalyAbstract Recently, metal‐organic chemical vapor deposition (MOCVD) has been proven successful to grow topological insulators such as antimony telluride (Sb2Te3), with their use as efficient spin‐charge converters at room temperature also being reported. On the other hand, a wafer‐scale synthesis of Sb2Te3 thin films showing clear‐cut electrical conduction driven by topologically protected surface states is still missing. Within this work, the growth of Sb2Te3 thin films with variable thicknesses over 4‐inch (4″) wafer‐scale Si(111) substrates as conducted via MOCVD is reported. By performing magnetoconductance measurements, weak antilocalization phenomena are detected over the whole 4″ area, thus proving the possibility to produce wafer‐scale Sb2Te3 topological insulator thin films. Furthermore, comprehensive information on the variability of the functional properties of Sb2Te3 thin films with their morphological, chemical, and structural properties, as probed by scanning electron microscopy, X‐ray diffraction/reflectivity, atomic force microscopy, Raman spectroscopy, time‐of‐flight secondary ion mass spectrometry, and energy‐dispersive X‐ray analyses is reported. This work provides a breakthrough for the technology scale‐up of these novel materials to be employed in future spintronic devices as well as applications in nanoelectronics, thermoelectrics, and quantum computing.https://doi.org/10.1002/admi.202400961chalcogenidesmagnetotransportMOCVDspintronicstopological insulatorsweak antilocalization |
| spellingShingle | Ali Shafiei Ahmad Fathi Hafshejani Rehab M. G. Ahmed Alessio Lamperti Emanuele Longo Lorenzo Locatelli Christian Martella Alessandro Molle Graziella Tallarida Carlo Zucchetti Claudia Wiemer Massimo Longo Roberto Mantovan Wafer‐Scale Synthesis of Topological Insulator Sb2Te3 Thin Films Advanced Materials Interfaces chalcogenides magnetotransport MOCVD spintronics topological insulators weak antilocalization |
| title | Wafer‐Scale Synthesis of Topological Insulator Sb2Te3 Thin Films |
| title_full | Wafer‐Scale Synthesis of Topological Insulator Sb2Te3 Thin Films |
| title_fullStr | Wafer‐Scale Synthesis of Topological Insulator Sb2Te3 Thin Films |
| title_full_unstemmed | Wafer‐Scale Synthesis of Topological Insulator Sb2Te3 Thin Films |
| title_short | Wafer‐Scale Synthesis of Topological Insulator Sb2Te3 Thin Films |
| title_sort | wafer scale synthesis of topological insulator sb2te3 thin films |
| topic | chalcogenides magnetotransport MOCVD spintronics topological insulators weak antilocalization |
| url | https://doi.org/10.1002/admi.202400961 |
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