Numerical simulation of the current-voltage characteristics of the inhomogeneous Schottky diodes
In this paper we offer methods for estimation parameters of diodes of the Schottky by comparing outcomes of calculations and experiment. Definite some parameters of contact area: allocation of a active impurity in this area, to define more precisely a potential barrier in the area, to study tunnel...
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| Format: | Article |
| Language: | English |
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Vilnius University Press
2002-12-01
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| Series: | Lietuvos Matematikos Rinkinys |
| Online Access: | https://www.zurnalai.vu.lt/LMR/article/view/32922 |
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| _version_ | 1825197270921904128 |
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| author | Albertas Pincevičius Rimantas-Jonas Rakauskas |
| author_facet | Albertas Pincevičius Rimantas-Jonas Rakauskas |
| author_sort | Albertas Pincevičius |
| collection | DOAJ |
| description |
In this paper we offer methods for estimation parameters of diodes of the Schottky by comparing outcomes of calculations and experiment. Definite some parameters of contact area: allocation of a active impurity in this area, to define more precisely a potential barrier in the area, to study tunnel mechanisms of electrons through this potential barrier. Such tasks are important from the practical point of view at improvement of performances of devices. One more problem the procedure helps to decide-to design devices with the established volt-ampere characteristic. In this case we can offer the corresponding allocation of an impurity in contact area, to select a technology for engineering of contact of the Schottky.
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| format | Article |
| id | doaj-art-beb413ade21a4852baa3aef5d8c7ff2b |
| institution | Kabale University |
| issn | 0132-2818 2335-898X |
| language | English |
| publishDate | 2002-12-01 |
| publisher | Vilnius University Press |
| record_format | Article |
| series | Lietuvos Matematikos Rinkinys |
| spelling | doaj-art-beb413ade21a4852baa3aef5d8c7ff2b2025-02-11T18:13:37ZengVilnius University PressLietuvos Matematikos Rinkinys0132-28182335-898X2002-12-0142spec.10.15388/LMR.2002.32922Numerical simulation of the current-voltage characteristics of the inhomogeneous Schottky diodesAlbertas Pincevičius0Rimantas-Jonas Rakauskas1Military Academy of LithuaniaMilitary Academy of Lithuania In this paper we offer methods for estimation parameters of diodes of the Schottky by comparing outcomes of calculations and experiment. Definite some parameters of contact area: allocation of a active impurity in this area, to define more precisely a potential barrier in the area, to study tunnel mechanisms of electrons through this potential barrier. Such tasks are important from the practical point of view at improvement of performances of devices. One more problem the procedure helps to decide-to design devices with the established volt-ampere characteristic. In this case we can offer the corresponding allocation of an impurity in contact area, to select a technology for engineering of contact of the Schottky. https://www.zurnalai.vu.lt/LMR/article/view/32922 |
| spellingShingle | Albertas Pincevičius Rimantas-Jonas Rakauskas Numerical simulation of the current-voltage characteristics of the inhomogeneous Schottky diodes Lietuvos Matematikos Rinkinys |
| title | Numerical simulation of the current-voltage characteristics of the inhomogeneous Schottky diodes |
| title_full | Numerical simulation of the current-voltage characteristics of the inhomogeneous Schottky diodes |
| title_fullStr | Numerical simulation of the current-voltage characteristics of the inhomogeneous Schottky diodes |
| title_full_unstemmed | Numerical simulation of the current-voltage characteristics of the inhomogeneous Schottky diodes |
| title_short | Numerical simulation of the current-voltage characteristics of the inhomogeneous Schottky diodes |
| title_sort | numerical simulation of the current voltage characteristics of the inhomogeneous schottky diodes |
| url | https://www.zurnalai.vu.lt/LMR/article/view/32922 |
| work_keys_str_mv | AT albertaspincevicius numericalsimulationofthecurrentvoltagecharacteristicsoftheinhomogeneousschottkydiodes AT rimantasjonasrakauskas numericalsimulationofthecurrentvoltagecharacteristicsoftheinhomogeneousschottkydiodes |