Mitigating Pass Gate Effect in Buried Channel Array Transistors Through Buried Oxide Integration: Addressing Interference Phenomenon Between Word Lines
As semiconductor devices become smaller, their performance and integration density improve, but new negative effects emerge due to the reduced distance between structures. In DRAM, these effects can lead to data loss or require additional refresh cycles, causing performance degradation. Specifically...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-11-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/14/22/10348 |
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