Analysis of thermal effects according to channel and drain contact metal distance

Analysis of thermal effects according to channel and drain contact metal distance

Unlike conventional planar metal-oxide-semiconductor field-effect transistors (MOSFET), multi-gate devices such as fin field-effect transistors (FinFET) suffer from serious electrical performance issues due to the self-heating effect (SHE) because the channel is surrounded by the gate dielectric. To...

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Bibliographic Details
Main Authors: Do Gyun An, Un Hyun Lim, Young Suh Song, Hyunwoo Kim, Jang Hyun Kim
Format: Article
Language:English
Published: Elsevier 2025-01-01
Series:Case Studies in Thermal Engineering
Subjects:
Self-heating effect (SHE)
Thermo-electric
Drain metal distance
Silicon on insulator (SOI)
SOI-FinFET
Multi-gate device
Online Access:http://www.sciencedirect.com/science/article/pii/S2214157X24016733
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