On the Transconductance of Polysilicon Thin Film Transistors
In order to achieve both driver and display capability for a number of display devices, TFT has attracted attention, model calculations are therefore presented for the grain boundary barrier height, in a polysilicon TFT considering the charge neutrality between the intrinsic free carriers and the gr...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2011-01-01
|
| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2011/3/articles/jnep_2011_V3_N3_28-35.pdf |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Be the first to leave a comment!