3D Nano Hafnium‐Based Ferroelectric Memory Vertical Array for High‐Density and High‐Reliability Logic‐In‐Memory Application
Abstract A new type of ferroelectric memory device with high reliability and complementary metal‐oxide‐semiconductor (CMOS) compatibility characteristics is an important condition for achieving integrated memory and computing chips. Here, 3D stacked ferroelectric memory devices based on ferroelectri...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-04-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400438 |
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| author | Jiajie Yu Tianyu Wang Chen Lu Zhenhai Li Kangli Xu Yongkai Liu Yifan Song Jialin Meng Hao Zhu Qingqing Sun David Wei Zhang Lin Chen |
| author_facet | Jiajie Yu Tianyu Wang Chen Lu Zhenhai Li Kangli Xu Yongkai Liu Yifan Song Jialin Meng Hao Zhu Qingqing Sun David Wei Zhang Lin Chen |
| author_sort | Jiajie Yu |
| collection | DOAJ |
| description | Abstract A new type of ferroelectric memory device with high reliability and complementary metal‐oxide‐semiconductor (CMOS) compatibility characteristics is an important condition for achieving integrated memory and computing chips. Here, 3D stacked ferroelectric memory devices based on ferroelectric materials of HfO2 are fabricated. The device exhibits high speed (50 ns), low read voltage (0.5 V), and great reliability with no substantial degradation after 1010 cycles and a 10‐years data retention at 85 °C. The IMP and NAND logic are achieved with stable memory window (>200 mV) across the vertical devices’ interconnection. On this basis, combining with the traditional CMOS logic device, multiple combination logic functions containing NOT, AND, and NOR are achieved by simulation. The collaboration of devices in the vertical direction providing the possibility of combining multi‐bit logic in memory functions and paves the way for the implementation of high‐density, high‐reliability, and low‐energy consumption computing‐in‐memory chips compatible with the CMOS technology. |
| format | Article |
| id | doaj-art-bd7e2d595f6a4f3492f97bbbdecb5b7a |
| institution | DOAJ |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-bd7e2d595f6a4f3492f97bbbdecb5b7a2025-08-20T03:06:43ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-04-01114n/an/a10.1002/aelm.2024004383D Nano Hafnium‐Based Ferroelectric Memory Vertical Array for High‐Density and High‐Reliability Logic‐In‐Memory ApplicationJiajie Yu0Tianyu Wang1Chen Lu2Zhenhai Li3Kangli Xu4Yongkai Liu5Yifan Song6Jialin Meng7Hao Zhu8Qingqing Sun9David Wei Zhang10Lin Chen11School of Microelectronics State Key Laboratory of Integrated Chips and Systems Fudan University Shanghai 200433 P. R. ChinaSchool of Integrated Circuits Shandong University Jinan 250100 P. R. ChinaSchool of Microelectronics State Key Laboratory of Integrated Chips and Systems Fudan University Shanghai 200433 P. R. ChinaSchool of Microelectronics State Key Laboratory of Integrated Chips and Systems Fudan University Shanghai 200433 P. R. ChinaSchool of Microelectronics State Key Laboratory of Integrated Chips and Systems Fudan University Shanghai 200433 P. R. ChinaSchool of Microelectronics State Key Laboratory of Integrated Chips and Systems Fudan University Shanghai 200433 P. R. ChinaSchool of Microelectronics State Key Laboratory of Integrated Chips and Systems Fudan University Shanghai 200433 P. R. ChinaSchool of Microelectronics State Key Laboratory of Integrated Chips and Systems Fudan University Shanghai 200433 P. R. ChinaSchool of Microelectronics State Key Laboratory of Integrated Chips and Systems Fudan University Shanghai 200433 P. R. ChinaSchool of Microelectronics State Key Laboratory of Integrated Chips and Systems Fudan University Shanghai 200433 P. R. ChinaSchool of Microelectronics State Key Laboratory of Integrated Chips and Systems Fudan University Shanghai 200433 P. R. ChinaSchool of Microelectronics State Key Laboratory of Integrated Chips and Systems Fudan University Shanghai 200433 P. R. ChinaAbstract A new type of ferroelectric memory device with high reliability and complementary metal‐oxide‐semiconductor (CMOS) compatibility characteristics is an important condition for achieving integrated memory and computing chips. Here, 3D stacked ferroelectric memory devices based on ferroelectric materials of HfO2 are fabricated. The device exhibits high speed (50 ns), low read voltage (0.5 V), and great reliability with no substantial degradation after 1010 cycles and a 10‐years data retention at 85 °C. The IMP and NAND logic are achieved with stable memory window (>200 mV) across the vertical devices’ interconnection. On this basis, combining with the traditional CMOS logic device, multiple combination logic functions containing NOT, AND, and NOR are achieved by simulation. The collaboration of devices in the vertical direction providing the possibility of combining multi‐bit logic in memory functions and paves the way for the implementation of high‐density, high‐reliability, and low‐energy consumption computing‐in‐memory chips compatible with the CMOS technology.https://doi.org/10.1002/aelm.2024004383D stacked memory arraycomputing‐in‐memoryhafnium‐based ferroelectric memoryhigh densityhigh reliability |
| spellingShingle | Jiajie Yu Tianyu Wang Chen Lu Zhenhai Li Kangli Xu Yongkai Liu Yifan Song Jialin Meng Hao Zhu Qingqing Sun David Wei Zhang Lin Chen 3D Nano Hafnium‐Based Ferroelectric Memory Vertical Array for High‐Density and High‐Reliability Logic‐In‐Memory Application Advanced Electronic Materials 3D stacked memory array computing‐in‐memory hafnium‐based ferroelectric memory high density high reliability |
| title | 3D Nano Hafnium‐Based Ferroelectric Memory Vertical Array for High‐Density and High‐Reliability Logic‐In‐Memory Application |
| title_full | 3D Nano Hafnium‐Based Ferroelectric Memory Vertical Array for High‐Density and High‐Reliability Logic‐In‐Memory Application |
| title_fullStr | 3D Nano Hafnium‐Based Ferroelectric Memory Vertical Array for High‐Density and High‐Reliability Logic‐In‐Memory Application |
| title_full_unstemmed | 3D Nano Hafnium‐Based Ferroelectric Memory Vertical Array for High‐Density and High‐Reliability Logic‐In‐Memory Application |
| title_short | 3D Nano Hafnium‐Based Ferroelectric Memory Vertical Array for High‐Density and High‐Reliability Logic‐In‐Memory Application |
| title_sort | 3d nano hafnium based ferroelectric memory vertical array for high density and high reliability logic in memory application |
| topic | 3D stacked memory array computing‐in‐memory hafnium‐based ferroelectric memory high density high reliability |
| url | https://doi.org/10.1002/aelm.202400438 |
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