High-Performance Self-Powered Broadband Photodetectors Based on a Bi<sub>2</sub>Se<sub>3</sub> Topological Insulator/ReSe<sub>2</sub> Heterojunction for Signal Transmission
Topological insulators (TIs) hold considerable promise for the advancement of optoelectronic technologies, including spectroscopy, imaging, and communication, owing to their remarkable optical and electrical characteristics. This study proposes a novel combination of Bi<inline-formula><math...
Saved in:
| Main Authors: | , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-07-01
|
| Series: | Photonics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2304-6732/12/7/709 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | Topological insulators (TIs) hold considerable promise for the advancement of optoelectronic technologies, including spectroscopy, imaging, and communication, owing to their remarkable optical and electrical characteristics. This study proposes a novel combination of Bi<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mo></mo><mn>2</mn></msub></semantics></math></inline-formula>Se<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mo></mo><mn>3</mn></msub></semantics></math></inline-formula> TIs and ReSe<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mo></mo><mn>2</mn></msub></semantics></math></inline-formula> for self-powered broadband photodetectors with high sensitivity and fast response time. The Bi<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mo></mo><mn>2</mn></msub></semantics></math></inline-formula>Se<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mo></mo><mn>3</mn></msub></semantics></math></inline-formula>/ReSe<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mo></mo><mn>2</mn></msub></semantics></math></inline-formula> heterojunction photodetector achieves broadband response spectra ranging for 375 nm to 1 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m. It demonstrates a significant responsivity of 64 mA/W at a wavelength of 600 nm (1 mW/cm<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mo></mo><mn>2</mn></msup></semantics></math></inline-formula>), exhibits a rapid response speed of 345 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>s rise/336 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>s fall time, and has a 3 dB bandwidth of 1.4 kHz under zero-bias conditions. The high performance can be attributed to the suitable energy band structure of Bi<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mo></mo><mn>2</mn></msub></semantics></math></inline-formula>Se<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mo></mo><mn>3</mn></msub></semantics></math></inline-formula>/ReSe<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mo></mo><mn>2</mn></msub></semantics></math></inline-formula> and high carrier mobility in surface states of Bi<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mo></mo><mn>2</mn></msub></semantics></math></inline-formula>Se<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mo></mo><mn>3</mn></msub></semantics></math></inline-formula>. Excitingly, self-powered TIs photodetectors allow for high-quality signal transmission. The TIs employed in photodetectors can stimulate the production of new optoelectronic features, but they could also be used for highly integrated photonic circuits in the future. |
|---|---|
| ISSN: | 2304-6732 |