Stealth dicing strategy for fabricating the cleavage mirror facets of semiconductor laser
We investigated the formation of cavity mirror facets of GaN-based laser diodes (LDs) using laser stealth dicing (SD) approach in skip-and-scribing mode and compared it with traditional diamond-tip edge-scribing method. As a result, high-quality LD cavity mirrors and non-degradative lasing propertie...
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Elsevier
2025-03-01
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| Series: | Materials & Design |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S0264127525001157 |
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| author | Menglai Lei Linghai Meng Yucheng Lin Yujing Deng Huanqing Chen Lei Liu Jianbo Fu Shengxiang Jiang Hua Zong Xiaodong Hu |
| author_facet | Menglai Lei Linghai Meng Yucheng Lin Yujing Deng Huanqing Chen Lei Liu Jianbo Fu Shengxiang Jiang Hua Zong Xiaodong Hu |
| author_sort | Menglai Lei |
| collection | DOAJ |
| description | We investigated the formation of cavity mirror facets of GaN-based laser diodes (LDs) using laser stealth dicing (SD) approach in skip-and-scribing mode and compared it with traditional diamond-tip edge-scribing method. As a result, high-quality LD cavity mirrors and non-degradative lasing properties were achieved with the SD scribe and cleavage method. The morphology measurement confirmed that the laser SD scribing effectively inhibited the formation of cavity mirror terrace-like structures, which usually appeared in traditional scribing methods, resulting in uniform and consistent cleavage bars. In a comparison experiment, A 1000-h burn-in test at 100 mA@40 °C was applied to TO56 packaged LDs to evaluate the effect of the new method on device performance. The results showed that the degradation rate of power in SD LDs is 7 % on average after aging. The average lifetime of SD LDs was 8083 h estimated by 1000-h of burn-in test, demonstrating the same stability and lifetime as the diamond-scribing LDs. The application of the novel laser SD scribe and cleavage solution in large-scale LD production was significant for improving yield and reducing cost. |
| format | Article |
| id | doaj-art-bd4d4fef57024209adeb0de86805e2c7 |
| institution | OA Journals |
| issn | 0264-1275 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Materials & Design |
| spelling | doaj-art-bd4d4fef57024209adeb0de86805e2c72025-08-20T02:00:42ZengElsevierMaterials & Design0264-12752025-03-0125111369510.1016/j.matdes.2025.113695Stealth dicing strategy for fabricating the cleavage mirror facets of semiconductor laserMenglai Lei0Linghai Meng1Yucheng Lin2Yujing Deng3Huanqing Chen4Lei Liu5Jianbo Fu6Shengxiang Jiang7Hua Zong8Xiaodong Hu9School of Physics, Peking University, 5 Yiheyuan Road, Haidian District, Beijing 100871, ChinaGuangxi Hurricane Chip Technology Co., LLC, Building 1, Innovation Park Ⅱ, Northern Ecological New District, Liuzhou, Guangxi Zhuang Autonomous Region (GZAR) 545003, China; Beijing Hurricane Chip Technology Co., LTD, Room 405-16, Unit 2, Building 15, Yard 16, Yingcai North Third Street, Future Science City, Changping District, Beijing 102200, China; Corresponding authors at: Guangxi Hurricane Chip Technology Co., LLC, Building 1, Innovation Park Ⅱ, Northern Ecological New District, Liuzhou, Guangxi Zhuang Autonomous Region (GZAR) 545003, China.Guangxi Hurricane Chip Technology Co., LLC, Building 1, Innovation Park Ⅱ, Northern Ecological New District, Liuzhou, Guangxi Zhuang Autonomous Region (GZAR) 545003, ChinaGuangxi Hurricane Chip Technology Co., LLC, Building 1, Innovation Park Ⅱ, Northern Ecological New District, Liuzhou, Guangxi Zhuang Autonomous Region (GZAR) 545003, ChinaSchool of Physics, Peking University, 5 Yiheyuan Road, Haidian District, Beijing 100871, ChinaGuangxi Hurricane Chip Technology Co., LLC, Building 1, Innovation Park Ⅱ, Northern Ecological New District, Liuzhou, Guangxi Zhuang Autonomous Region (GZAR) 545003, China; Beijing Hurricane Chip Technology Co., LTD, Room 405-16, Unit 2, Building 15, Yard 16, Yingcai North Third Street, Future Science City, Changping District, Beijing 102200, ChinaGuangxi Hurricane Chip Technology Co., LLC, Building 1, Innovation Park Ⅱ, Northern Ecological New District, Liuzhou, Guangxi Zhuang Autonomous Region (GZAR) 545003, China; Beijing Hurricane Chip Technology Co., LTD, Room 405-16, Unit 2, Building 15, Yard 16, Yingcai North Third Street, Future Science City, Changping District, Beijing 102200, ChinaGuangxi Hurricane Chip Technology Co., LLC, Building 1, Innovation Park Ⅱ, Northern Ecological New District, Liuzhou, Guangxi Zhuang Autonomous Region (GZAR) 545003, China; Beijing Hurricane Chip Technology Co., LTD, Room 405-16, Unit 2, Building 15, Yard 16, Yingcai North Third Street, Future Science City, Changping District, Beijing 102200, ChinaGuangxi Hurricane Chip Technology Co., LLC, Building 1, Innovation Park Ⅱ, Northern Ecological New District, Liuzhou, Guangxi Zhuang Autonomous Region (GZAR) 545003, China; Beijing Hurricane Chip Technology Co., LTD, Room 405-16, Unit 2, Building 15, Yard 16, Yingcai North Third Street, Future Science City, Changping District, Beijing 102200, China; Corresponding authors at: Guangxi Hurricane Chip Technology Co., LLC, Building 1, Innovation Park Ⅱ, Northern Ecological New District, Liuzhou, Guangxi Zhuang Autonomous Region (GZAR) 545003, China.School of Physics, Peking University, 5 Yiheyuan Road, Haidian District, Beijing 100871, China; Guangxi Hurricane Chip Technology Co., LLC, Building 1, Innovation Park Ⅱ, Northern Ecological New District, Liuzhou, Guangxi Zhuang Autonomous Region (GZAR) 545003, China; Beijing Hurricane Chip Technology Co., LTD, Room 405-16, Unit 2, Building 15, Yard 16, Yingcai North Third Street, Future Science City, Changping District, Beijing 102200, China; Corresponding authors at: Guangxi Hurricane Chip Technology Co., LLC, Building 1, Innovation Park Ⅱ, Northern Ecological New District, Liuzhou, Guangxi Zhuang Autonomous Region (GZAR) 545003, China.We investigated the formation of cavity mirror facets of GaN-based laser diodes (LDs) using laser stealth dicing (SD) approach in skip-and-scribing mode and compared it with traditional diamond-tip edge-scribing method. As a result, high-quality LD cavity mirrors and non-degradative lasing properties were achieved with the SD scribe and cleavage method. The morphology measurement confirmed that the laser SD scribing effectively inhibited the formation of cavity mirror terrace-like structures, which usually appeared in traditional scribing methods, resulting in uniform and consistent cleavage bars. In a comparison experiment, A 1000-h burn-in test at 100 mA@40 °C was applied to TO56 packaged LDs to evaluate the effect of the new method on device performance. The results showed that the degradation rate of power in SD LDs is 7 % on average after aging. The average lifetime of SD LDs was 8083 h estimated by 1000-h of burn-in test, demonstrating the same stability and lifetime as the diamond-scribing LDs. The application of the novel laser SD scribe and cleavage solution in large-scale LD production was significant for improving yield and reducing cost.http://www.sciencedirect.com/science/article/pii/S0264127525001157Cavity mirror facetsCleavageGaN laser diodeLaser stealth dicingDeflection loss |
| spellingShingle | Menglai Lei Linghai Meng Yucheng Lin Yujing Deng Huanqing Chen Lei Liu Jianbo Fu Shengxiang Jiang Hua Zong Xiaodong Hu Stealth dicing strategy for fabricating the cleavage mirror facets of semiconductor laser Materials & Design Cavity mirror facets Cleavage GaN laser diode Laser stealth dicing Deflection loss |
| title | Stealth dicing strategy for fabricating the cleavage mirror facets of semiconductor laser |
| title_full | Stealth dicing strategy for fabricating the cleavage mirror facets of semiconductor laser |
| title_fullStr | Stealth dicing strategy for fabricating the cleavage mirror facets of semiconductor laser |
| title_full_unstemmed | Stealth dicing strategy for fabricating the cleavage mirror facets of semiconductor laser |
| title_short | Stealth dicing strategy for fabricating the cleavage mirror facets of semiconductor laser |
| title_sort | stealth dicing strategy for fabricating the cleavage mirror facets of semiconductor laser |
| topic | Cavity mirror facets Cleavage GaN laser diode Laser stealth dicing Deflection loss |
| url | http://www.sciencedirect.com/science/article/pii/S0264127525001157 |
| work_keys_str_mv | AT menglailei stealthdicingstrategyforfabricatingthecleavagemirrorfacetsofsemiconductorlaser AT linghaimeng stealthdicingstrategyforfabricatingthecleavagemirrorfacetsofsemiconductorlaser AT yuchenglin stealthdicingstrategyforfabricatingthecleavagemirrorfacetsofsemiconductorlaser AT yujingdeng stealthdicingstrategyforfabricatingthecleavagemirrorfacetsofsemiconductorlaser AT huanqingchen stealthdicingstrategyforfabricatingthecleavagemirrorfacetsofsemiconductorlaser AT leiliu stealthdicingstrategyforfabricatingthecleavagemirrorfacetsofsemiconductorlaser AT jianbofu stealthdicingstrategyforfabricatingthecleavagemirrorfacetsofsemiconductorlaser AT shengxiangjiang stealthdicingstrategyforfabricatingthecleavagemirrorfacetsofsemiconductorlaser AT huazong stealthdicingstrategyforfabricatingthecleavagemirrorfacetsofsemiconductorlaser AT xiaodonghu stealthdicingstrategyforfabricatingthecleavagemirrorfacetsofsemiconductorlaser |