50 eV O+ ion induced deposition of tin dioxide using tetramethyltin
The aim of the present study was to deposit tin oxide films on Si wafers or quartz crystal microbalance plates acting as substrates, using low-energy ion beams. The substrates were held at ambient temperature and two different methods were employed. In one case, the substrates were exposed to a 100 ...
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Elsevier
2025-02-01
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| Series: | Heliyon |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2405844025008229 |
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| author | Satoru Yoshimura Takae Takeuchi Masato Kiuchi |
| author_facet | Satoru Yoshimura Takae Takeuchi Masato Kiuchi |
| author_sort | Satoru Yoshimura |
| collection | DOAJ |
| description | The aim of the present study was to deposit tin oxide films on Si wafers or quartz crystal microbalance plates acting as substrates, using low-energy ion beams. The substrates were held at ambient temperature and two different methods were employed. In one case, the substrates were exposed to a 100 eV beam of Sn+ ions together with a flow of gaseous oxygen, and these conditions were found to generate films. Analyses by X-ray photoelectron spectroscopy (XPS) confirmed that these films were made of metallic tin. In other trials, the substrates were exposed to tetramethyltin in conjunction with a 50 eV O+ ion beam. This procedure deposited films with a thickness of 30 nm and assessments by XPS and X-ray diffraction established that these films were made of tin dioxide. |
| format | Article |
| id | doaj-art-bcf2de986f2541209c38eebdaec1d780 |
| institution | Kabale University |
| issn | 2405-8440 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Heliyon |
| spelling | doaj-art-bcf2de986f2541209c38eebdaec1d7802025-02-09T05:00:41ZengElsevierHeliyon2405-84402025-02-01113e4244250 eV O+ ion induced deposition of tin dioxide using tetramethyltinSatoru Yoshimura0Takae Takeuchi1Masato Kiuchi2Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka, 565-0871, Japan; Corresponding author.Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka, 565-0871, JapanDivision of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka, 565-0871, Japan; Cerast Laboratory, Setagaya, Tokyo, 154-0011, JapanThe aim of the present study was to deposit tin oxide films on Si wafers or quartz crystal microbalance plates acting as substrates, using low-energy ion beams. The substrates were held at ambient temperature and two different methods were employed. In one case, the substrates were exposed to a 100 eV beam of Sn+ ions together with a flow of gaseous oxygen, and these conditions were found to generate films. Analyses by X-ray photoelectron spectroscopy (XPS) confirmed that these films were made of metallic tin. In other trials, the substrates were exposed to tetramethyltin in conjunction with a 50 eV O+ ion beam. This procedure deposited films with a thickness of 30 nm and assessments by XPS and X-ray diffraction established that these films were made of tin dioxide.http://www.sciencedirect.com/science/article/pii/S2405844025008229Tin dioxideTin ion beamOxygen ion beamIon induced depositionTetramethyltin |
| spellingShingle | Satoru Yoshimura Takae Takeuchi Masato Kiuchi 50 eV O+ ion induced deposition of tin dioxide using tetramethyltin Heliyon Tin dioxide Tin ion beam Oxygen ion beam Ion induced deposition Tetramethyltin |
| title | 50 eV O+ ion induced deposition of tin dioxide using tetramethyltin |
| title_full | 50 eV O+ ion induced deposition of tin dioxide using tetramethyltin |
| title_fullStr | 50 eV O+ ion induced deposition of tin dioxide using tetramethyltin |
| title_full_unstemmed | 50 eV O+ ion induced deposition of tin dioxide using tetramethyltin |
| title_short | 50 eV O+ ion induced deposition of tin dioxide using tetramethyltin |
| title_sort | 50 ev o ion induced deposition of tin dioxide using tetramethyltin |
| topic | Tin dioxide Tin ion beam Oxygen ion beam Ion induced deposition Tetramethyltin |
| url | http://www.sciencedirect.com/science/article/pii/S2405844025008229 |
| work_keys_str_mv | AT satoruyoshimura 50evoioninduceddepositionoftindioxideusingtetramethyltin AT takaetakeuchi 50evoioninduceddepositionoftindioxideusingtetramethyltin AT masatokiuchi 50evoioninduceddepositionoftindioxideusingtetramethyltin |