Effect of A/B sites co-doping on the structure, electric and dielectric properties of CaTiSiO5 ceramics
Dielectrics with high permittivity and temperature stability are important for the development of high-temperature multilayer ceramic capacitors (MLCCs). In this study, Ca[Formula: see text]NaxTi[Formula: see text]NbxSiO5 (abbreviated as CTS[Formula: see text]NN) ceramics were prepared by solid-phas...
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World Scientific Publishing
2025-04-01
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| Series: | Journal of Advanced Dielectrics |
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| Online Access: | https://www.worldscientific.com/doi/10.1142/S2010135X2450022X |
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| author | Hanwen Ni Zichen He Zhifu Liu |
| author_facet | Hanwen Ni Zichen He Zhifu Liu |
| author_sort | Hanwen Ni |
| collection | DOAJ |
| description | Dielectrics with high permittivity and temperature stability are important for the development of high-temperature multilayer ceramic capacitors (MLCCs). In this study, Ca[Formula: see text]NaxTi[Formula: see text]NbxSiO5 (abbreviated as CTS[Formula: see text]NN) ceramics were prepared by solid-phase reaction method. The introduction of NN weakens the long-range ordered displacement of Ti, leading to a significant increase in the dielectric temperature stability. The CTS−2%NN samples exhibit high permittivity (53) and TCC [Formula: see text] ppm/∘C in the range of [Formula: see text]C to 300∘C. The CTS-based ceramics behave high dielectric temperature stability. In addition, the bandgap of the CTS-based ceramics increased significantly, which is favorable for improving the breakdown strength of the material. For [Formula: see text]% samples, the breakdown strength reaches 621[Formula: see text]kV/cm. Thus, the designed CTS-based dielectrics are promising for high-temperature capacitors. |
| format | Article |
| id | doaj-art-bcaeacd31502478d8121e26f0a3566af |
| institution | Kabale University |
| issn | 2010-135X 2010-1368 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | World Scientific Publishing |
| record_format | Article |
| series | Journal of Advanced Dielectrics |
| spelling | doaj-art-bcaeacd31502478d8121e26f0a3566af2025-01-07T03:28:07ZengWorld Scientific PublishingJournal of Advanced Dielectrics2010-135X2010-13682025-04-01150210.1142/S2010135X2450022XEffect of A/B sites co-doping on the structure, electric and dielectric properties of CaTiSiO5 ceramicsHanwen Ni0Zichen He1Zhifu Liu2CAS Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, P. R. ChinaCAS Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, P. R. ChinaCAS Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, P. R. ChinaDielectrics with high permittivity and temperature stability are important for the development of high-temperature multilayer ceramic capacitors (MLCCs). In this study, Ca[Formula: see text]NaxTi[Formula: see text]NbxSiO5 (abbreviated as CTS[Formula: see text]NN) ceramics were prepared by solid-phase reaction method. The introduction of NN weakens the long-range ordered displacement of Ti, leading to a significant increase in the dielectric temperature stability. The CTS−2%NN samples exhibit high permittivity (53) and TCC [Formula: see text] ppm/∘C in the range of [Formula: see text]C to 300∘C. The CTS-based ceramics behave high dielectric temperature stability. In addition, the bandgap of the CTS-based ceramics increased significantly, which is favorable for improving the breakdown strength of the material. For [Formula: see text]% samples, the breakdown strength reaches 621[Formula: see text]kV/cm. Thus, the designed CTS-based dielectrics are promising for high-temperature capacitors.https://www.worldscientific.com/doi/10.1142/S2010135X2450022XCaTiSiO5co-dopingdielectric propertytemperature stability |
| spellingShingle | Hanwen Ni Zichen He Zhifu Liu Effect of A/B sites co-doping on the structure, electric and dielectric properties of CaTiSiO5 ceramics Journal of Advanced Dielectrics CaTiSiO5 co-doping dielectric property temperature stability |
| title | Effect of A/B sites co-doping on the structure, electric and dielectric properties of CaTiSiO5 ceramics |
| title_full | Effect of A/B sites co-doping on the structure, electric and dielectric properties of CaTiSiO5 ceramics |
| title_fullStr | Effect of A/B sites co-doping on the structure, electric and dielectric properties of CaTiSiO5 ceramics |
| title_full_unstemmed | Effect of A/B sites co-doping on the structure, electric and dielectric properties of CaTiSiO5 ceramics |
| title_short | Effect of A/B sites co-doping on the structure, electric and dielectric properties of CaTiSiO5 ceramics |
| title_sort | effect of a b sites co doping on the structure electric and dielectric properties of catisio5 ceramics |
| topic | CaTiSiO5 co-doping dielectric property temperature stability |
| url | https://www.worldscientific.com/doi/10.1142/S2010135X2450022X |
| work_keys_str_mv | AT hanwenni effectofabsitescodopingonthestructureelectricanddielectricpropertiesofcatisio5ceramics AT zichenhe effectofabsitescodopingonthestructureelectricanddielectricpropertiesofcatisio5ceramics AT zhifuliu effectofabsitescodopingonthestructureelectricanddielectricpropertiesofcatisio5ceramics |