Electric Field-Enhanced SERS Detection Using MoS<sub>2</sub>-Coated Patterned Si Substrate with Micro-Pyramid Pits
This study utilized semiconductor processing techniques to fabricate patterned silicon (Si) substrates with arrays of inverted pyramid-shaped micro-pits by etching. Molybdenum trioxide (MoO<sub>3</sub>) was then deposited on these patterned Si substrates using a thermal evaporation syste...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-11-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/14/22/1852 |
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| Summary: | This study utilized semiconductor processing techniques to fabricate patterned silicon (Si) substrates with arrays of inverted pyramid-shaped micro-pits by etching. Molybdenum trioxide (MoO<sub>3</sub>) was then deposited on these patterned Si substrates using a thermal evaporation system, followed by two-stage sulfurization in a high-temperature furnace to grow MoS<sub>2</sub> thin films consisting of only a few atomic layers. During the dropwise titration of Rhodamine 6G (R6G) solution, a longitudinal electric field was applied using a Keithley 2400 (Cleveland, OH, USA) source meter. Raman mapping revealed that under a 100 mV condition, the analyte R6G molecules were effectively confined within the pits. Due to its two-dimensional structure, MoS<sub>2</sub> provides a high surface area and supports a surface-enhanced Raman scattering (SERS) charge transfer mechanism. The SERS results demonstrated that the intensity in the pits of the few-layer MoS<sub>2</sub>/patterned Si SERS substrate was approximately 274 times greater compared to planar Si, with a limit of detection reaching 10<sup>−5</sup> M. The experimental results confirm that this method effectively resolves the issue of random distribution of analyte molecules during droplet evaporation, thereby enhancing detection sensitivity and stability. |
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| ISSN: | 2079-4991 |