Study on Surge Capacity of SiC MOSFET Based on Channel State
The reliability of the SiC MOSFET body diode has been greatly improved due to technological progress, and it has replaced freewheeling diodes in some fields and modules. Based on the surge current test, the non-repetitive surge current characteristics of SiC MOSFET body diode under different channel...
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| Format: | Article |
| Language: | zho |
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Editorial Department of Electric Drive for Locomotives
2021-09-01
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| Series: | 机车电传动 |
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| Online Access: | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2021.05.010 |
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| author | Heli MENG Erping DENG Wenjie WANG Yongzhang HUANG |
| author_facet | Heli MENG Erping DENG Wenjie WANG Yongzhang HUANG |
| author_sort | Heli MENG |
| collection | DOAJ |
| description | The reliability of the SiC MOSFET body diode has been greatly improved due to technological progress, and it has replaced freewheeling diodes in some fields and modules. Based on the surge current test, the non-repetitive surge current characteristics of SiC MOSFET body diode under different channel states were deeply studied in this paper. First, a surge current test platform was built and the devices of CREE and Infineon were tested. Then, the changes of threshold voltage, on-resistance,body diode voltage, and drain leakage current before and after the surge current test were measured and compared. After the device failed, the change of its internal structure was observed by scanning acoustic microscope, and the failure reason of the device was analyzed. Test results showed that the reliability of the gate and the metal layer together determine the reliability of the device under the surge current in SiC MOSFET devices. On the one hand, channel conduction helped to reduce the maximum junction temperature and improve the reliability under surge current for devices with high gate reliability, on the other hand, the channel closing helped to protect the gate of devices with low gate reliability. |
| format | Article |
| id | doaj-art-bbfbfb3cdd754bfe8f95fe892cc47f2f |
| institution | Kabale University |
| issn | 1000-128X |
| language | zho |
| publishDate | 2021-09-01 |
| publisher | Editorial Department of Electric Drive for Locomotives |
| record_format | Article |
| series | 机车电传动 |
| spelling | doaj-art-bbfbfb3cdd754bfe8f95fe892cc47f2f2025-08-20T03:48:58ZzhoEditorial Department of Electric Drive for Locomotives机车电传动1000-128X2021-09-01647020898633Study on Surge Capacity of SiC MOSFET Based on Channel StateHeli MENGErping DENGWenjie WANGYongzhang HUANGThe reliability of the SiC MOSFET body diode has been greatly improved due to technological progress, and it has replaced freewheeling diodes in some fields and modules. Based on the surge current test, the non-repetitive surge current characteristics of SiC MOSFET body diode under different channel states were deeply studied in this paper. First, a surge current test platform was built and the devices of CREE and Infineon were tested. Then, the changes of threshold voltage, on-resistance,body diode voltage, and drain leakage current before and after the surge current test were measured and compared. After the device failed, the change of its internal structure was observed by scanning acoustic microscope, and the failure reason of the device was analyzed. Test results showed that the reliability of the gate and the metal layer together determine the reliability of the device under the surge current in SiC MOSFET devices. On the one hand, channel conduction helped to reduce the maximum junction temperature and improve the reliability under surge current for devices with high gate reliability, on the other hand, the channel closing helped to protect the gate of devices with low gate reliability.http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2021.05.010SiC MOSFETchannelmetal layerbody diodesurge currentgate reliability |
| spellingShingle | Heli MENG Erping DENG Wenjie WANG Yongzhang HUANG Study on Surge Capacity of SiC MOSFET Based on Channel State 机车电传动 SiC MOSFET channel metal layer body diode surge current gate reliability |
| title | Study on Surge Capacity of SiC MOSFET Based on Channel State |
| title_full | Study on Surge Capacity of SiC MOSFET Based on Channel State |
| title_fullStr | Study on Surge Capacity of SiC MOSFET Based on Channel State |
| title_full_unstemmed | Study on Surge Capacity of SiC MOSFET Based on Channel State |
| title_short | Study on Surge Capacity of SiC MOSFET Based on Channel State |
| title_sort | study on surge capacity of sic mosfet based on channel state |
| topic | SiC MOSFET channel metal layer body diode surge current gate reliability |
| url | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2021.05.010 |
| work_keys_str_mv | AT helimeng studyonsurgecapacityofsicmosfetbasedonchannelstate AT erpingdeng studyonsurgecapacityofsicmosfetbasedonchannelstate AT wenjiewang studyonsurgecapacityofsicmosfetbasedonchannelstate AT yongzhanghuang studyonsurgecapacityofsicmosfetbasedonchannelstate |