Gate‐Tunable Dual‐Mode Optoelectronic Device for Self‐Powered Photodetector and Optoelectronic Synapse
Abstract In the advancing field of optoelectronics, multifunctional devices that integrate both detection and processing capabilities are increasingly desirable. Here, a gate‐tunable dual‐mode optoelectronic device based on a MoTe2/MoS2 van der Waals heterostructure, designed to operate as both a se...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2025-05-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202416259 |
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| _version_ | 1850190906779500544 |
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| author | Yi Ouyang Chaoyi Zhang Jun Wang Zheng Guo Zegao Wang Mingdong Dong |
| author_facet | Yi Ouyang Chaoyi Zhang Jun Wang Zheng Guo Zegao Wang Mingdong Dong |
| author_sort | Yi Ouyang |
| collection | DOAJ |
| description | Abstract In the advancing field of optoelectronics, multifunctional devices that integrate both detection and processing capabilities are increasingly desirable. Here, a gate‐tunable dual‐mode optoelectronic device based on a MoTe2/MoS2 van der Waals heterostructure, designed to operate as both a self‐powered photodetector and an optoelectronic synapse, is reported. The device leverages the photovoltaic effect in the MoTe2/MoS2 PN junction for self‐powered photodetection and utilizes trapping states at the SiO2/MoS2 interface to emulate synaptic behavior. Gate voltage modulation enables precise control of the device's band structure, facilitating seamless switching between these two operational modes. The photodetector mode demonstrates broadband detection and fast response speed, while the optoelectronic synapse mode exhibits robust long‐term memory characteristics, mimicking biological synaptic behavior. This dual functionality opens new possibilities for integrating neuromorphic computing into traditional optoelectronic systems, offering a potential pathway for developing advanced intelligent sensing and computing technologies. |
| format | Article |
| id | doaj-art-bb9bc29b41eb4baf81f35ecc8487614e |
| institution | OA Journals |
| issn | 2198-3844 |
| language | English |
| publishDate | 2025-05-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj-art-bb9bc29b41eb4baf81f35ecc8487614e2025-08-20T02:15:07ZengWileyAdvanced Science2198-38442025-05-011217n/an/a10.1002/advs.202416259Gate‐Tunable Dual‐Mode Optoelectronic Device for Self‐Powered Photodetector and Optoelectronic SynapseYi Ouyang0Chaoyi Zhang1Jun Wang2Zheng Guo3Zegao Wang4Mingdong Dong5Interdisciplinary Nanoscience Center Aarhus University Aarhus 8000 DenmarkInterdisciplinary Nanoscience Center Aarhus University Aarhus 8000 DenmarkSchool of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu 610054 ChinaDepartment of Biological and Chemical Engineering Aarhus University Aarhus 8000 DenmarkCollege of Materials Science and Engineering Sichuan University Chengdu 610065 ChinaInterdisciplinary Nanoscience Center Aarhus University Aarhus 8000 DenmarkAbstract In the advancing field of optoelectronics, multifunctional devices that integrate both detection and processing capabilities are increasingly desirable. Here, a gate‐tunable dual‐mode optoelectronic device based on a MoTe2/MoS2 van der Waals heterostructure, designed to operate as both a self‐powered photodetector and an optoelectronic synapse, is reported. The device leverages the photovoltaic effect in the MoTe2/MoS2 PN junction for self‐powered photodetection and utilizes trapping states at the SiO2/MoS2 interface to emulate synaptic behavior. Gate voltage modulation enables precise control of the device's band structure, facilitating seamless switching between these two operational modes. The photodetector mode demonstrates broadband detection and fast response speed, while the optoelectronic synapse mode exhibits robust long‐term memory characteristics, mimicking biological synaptic behavior. This dual functionality opens new possibilities for integrating neuromorphic computing into traditional optoelectronic systems, offering a potential pathway for developing advanced intelligent sensing and computing technologies.https://doi.org/10.1002/advs.202416259dual‐modeMoTe2/MoS2optoelectronic synapsephotodetectorvan der Waals heterostructure |
| spellingShingle | Yi Ouyang Chaoyi Zhang Jun Wang Zheng Guo Zegao Wang Mingdong Dong Gate‐Tunable Dual‐Mode Optoelectronic Device for Self‐Powered Photodetector and Optoelectronic Synapse Advanced Science dual‐mode MoTe2/MoS2 optoelectronic synapse photodetector van der Waals heterostructure |
| title | Gate‐Tunable Dual‐Mode Optoelectronic Device for Self‐Powered Photodetector and Optoelectronic Synapse |
| title_full | Gate‐Tunable Dual‐Mode Optoelectronic Device for Self‐Powered Photodetector and Optoelectronic Synapse |
| title_fullStr | Gate‐Tunable Dual‐Mode Optoelectronic Device for Self‐Powered Photodetector and Optoelectronic Synapse |
| title_full_unstemmed | Gate‐Tunable Dual‐Mode Optoelectronic Device for Self‐Powered Photodetector and Optoelectronic Synapse |
| title_short | Gate‐Tunable Dual‐Mode Optoelectronic Device for Self‐Powered Photodetector and Optoelectronic Synapse |
| title_sort | gate tunable dual mode optoelectronic device for self powered photodetector and optoelectronic synapse |
| topic | dual‐mode MoTe2/MoS2 optoelectronic synapse photodetector van der Waals heterostructure |
| url | https://doi.org/10.1002/advs.202416259 |
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