Effects of Hydrogen Plasma on the Electrical Properties of F-Doped ZnO Thin Films and p-i-n α-Si:H Thin Film Solar Cells
1.5 wt% zinc fluoride (ZnF2) was mixed with zinc oxide powder to form the F-doped ZnO (FZO) composition. At first, the FZO thin films were deposited at room temperature and 5×10-3 Torr in pure Ar under different deposition power. Hall measurements of the as-deposited FZO thin films were investigated...
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| Main Authors: | Fang-Hsing Wang, Shang-Chao Hung, Cheng-Fu Yang, Yen-Hsien Lee |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2014-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2014/425057 |
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