Effects of Hydrogen Plasma on the Electrical Properties of F-Doped ZnO Thin Films and p-i-n α-Si:H Thin Film Solar Cells
1.5 wt% zinc fluoride (ZnF2) was mixed with zinc oxide powder to form the F-doped ZnO (FZO) composition. At first, the FZO thin films were deposited at room temperature and 5×10-3 Torr in pure Ar under different deposition power. Hall measurements of the as-deposited FZO thin films were investigated...
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| Format: | Article |
| Language: | English |
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Wiley
2014-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2014/425057 |
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| author | Fang-Hsing Wang Shang-Chao Hung Cheng-Fu Yang Yen-Hsien Lee |
| author_facet | Fang-Hsing Wang Shang-Chao Hung Cheng-Fu Yang Yen-Hsien Lee |
| author_sort | Fang-Hsing Wang |
| collection | DOAJ |
| description | 1.5 wt% zinc fluoride (ZnF2) was mixed with zinc oxide powder to form the F-doped ZnO (FZO) composition. At first, the FZO thin films were deposited at room temperature and 5×10-3 Torr in pure Ar under different deposition power. Hall measurements of the as-deposited FZO thin films were investigated, and then the electrical properties were used to find the deposition power causing the FZO thin films with minimum resistance. The FZO thin films with minimum resistance were further treated by H2 plasma and then found their variations in the electrical properties by Hall measurements. Hydrochloric (HCl) acid solutions with different concentrations (0.1%, 0.2%, and 0.5%) were used to etch the surfaces of the FZO thin films. Finally, the as-deposited, HCl-etched as-deposited, and HCl-etched H2-plasma-treated FZO thin films were used as transparent electrodes to fabricate the p-i-n α-Si:H thin film solar cells and their characteristics were compared in this study. We would show that using H2-plasma-treated and HCl-etched FZO thin films as transparent electrodes would improve the efficiency of the fabricated thin film solar cells. |
| format | Article |
| id | doaj-art-bb9585c7d7e048e38d8b14a80628b9af |
| institution | DOAJ |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-bb9585c7d7e048e38d8b14a80628b9af2025-08-20T03:22:54ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2014-01-01201410.1155/2014/425057425057Effects of Hydrogen Plasma on the Electrical Properties of F-Doped ZnO Thin Films and p-i-n α-Si:H Thin Film Solar CellsFang-Hsing Wang0Shang-Chao Hung1Cheng-Fu Yang2Yen-Hsien Lee3Department of Electrical Engineering and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, TaiwanDepartment of Electrical Information Technology and Communications, Shih Chien University, Kaohsiung Campus, Kaohsiung 84550, TaiwanDepartment of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 81147, TaiwanDepartment of Electrical Engineering and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan1.5 wt% zinc fluoride (ZnF2) was mixed with zinc oxide powder to form the F-doped ZnO (FZO) composition. At first, the FZO thin films were deposited at room temperature and 5×10-3 Torr in pure Ar under different deposition power. Hall measurements of the as-deposited FZO thin films were investigated, and then the electrical properties were used to find the deposition power causing the FZO thin films with minimum resistance. The FZO thin films with minimum resistance were further treated by H2 plasma and then found their variations in the electrical properties by Hall measurements. Hydrochloric (HCl) acid solutions with different concentrations (0.1%, 0.2%, and 0.5%) were used to etch the surfaces of the FZO thin films. Finally, the as-deposited, HCl-etched as-deposited, and HCl-etched H2-plasma-treated FZO thin films were used as transparent electrodes to fabricate the p-i-n α-Si:H thin film solar cells and their characteristics were compared in this study. We would show that using H2-plasma-treated and HCl-etched FZO thin films as transparent electrodes would improve the efficiency of the fabricated thin film solar cells.http://dx.doi.org/10.1155/2014/425057 |
| spellingShingle | Fang-Hsing Wang Shang-Chao Hung Cheng-Fu Yang Yen-Hsien Lee Effects of Hydrogen Plasma on the Electrical Properties of F-Doped ZnO Thin Films and p-i-n α-Si:H Thin Film Solar Cells International Journal of Photoenergy |
| title | Effects of Hydrogen Plasma on the Electrical Properties of F-Doped ZnO Thin Films and p-i-n α-Si:H Thin Film Solar Cells |
| title_full | Effects of Hydrogen Plasma on the Electrical Properties of F-Doped ZnO Thin Films and p-i-n α-Si:H Thin Film Solar Cells |
| title_fullStr | Effects of Hydrogen Plasma on the Electrical Properties of F-Doped ZnO Thin Films and p-i-n α-Si:H Thin Film Solar Cells |
| title_full_unstemmed | Effects of Hydrogen Plasma on the Electrical Properties of F-Doped ZnO Thin Films and p-i-n α-Si:H Thin Film Solar Cells |
| title_short | Effects of Hydrogen Plasma on the Electrical Properties of F-Doped ZnO Thin Films and p-i-n α-Si:H Thin Film Solar Cells |
| title_sort | effects of hydrogen plasma on the electrical properties of f doped zno thin films and p i n α si h thin film solar cells |
| url | http://dx.doi.org/10.1155/2014/425057 |
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