New SiC Microwire-Based Ion Sensitive Junction Field Effect Transistors (SiC ISJFETs) for pH Sensing
For the first time, we have implemented new kinds of ISFETs based on silicon carbide (SiC). Thanks to its chemical inertness, SiC is an interesting semiconductor for the development of chemically robust and biocompatible ISFETs. The challenge is to replace Si NWFETs for biochemical sensing due to th...
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MDPI AG
2024-03-01
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| author | Olfa Karker Konstantinos Zekentes Nicolaos Makris Edwige Bano Valérie Stambouli |
| author_facet | Olfa Karker Konstantinos Zekentes Nicolaos Makris Edwige Bano Valérie Stambouli |
| author_sort | Olfa Karker |
| collection | DOAJ |
| description | For the first time, we have implemented new kinds of ISFETs based on silicon carbide (SiC). Thanks to its chemical inertness, SiC is an interesting semiconductor for the development of chemically robust and biocompatible ISFETs. The challenge is to replace Si NWFETs for biochemical sensing due to the lack of long-term stability of Si NWs in aqueous solutions. More particularly, we fabricated a micro/nanowire SiC-based ion-sensitive junction field-effect transistor (SiC-ISJFET) and studied its sensitivity to pH variations. The obtained sensitivity reaches 500 mV/pH, making it the first SiC pH sensor with performance equaling that of the latest NWFET Si-based pH sensors. |
| format | Article |
| id | doaj-art-bb8f2c4c7c0d4f769f0e9fcef5e817eb |
| institution | OA Journals |
| issn | 2504-3900 |
| language | English |
| publishDate | 2024-03-01 |
| publisher | MDPI AG |
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| series | Proceedings |
| spelling | doaj-art-bb8f2c4c7c0d4f769f0e9fcef5e817eb2025-08-20T02:01:16ZengMDPI AGProceedings2504-39002024-03-019719810.3390/proceedings2024097098New SiC Microwire-Based Ion Sensitive Junction Field Effect Transistors (SiC ISJFETs) for pH SensingOlfa Karker0Konstantinos Zekentes1Nicolaos Makris2Edwige Bano3Valérie Stambouli4IMEP-LaHC, University Grenoble Alpes, CNRS, Grenoble INP, F-38000 Grenoble, FranceIMEP-LaHC, University Grenoble Alpes, CNRS, Grenoble INP, F-38000 Grenoble, FranceMRG-IESL/FORTH, Vassilika Vouton, P.O. Box 1385 Heraklion, GreeceIMEP-LaHC, University Grenoble Alpes, CNRS, Grenoble INP, F-38000 Grenoble, FranceLMGP, University Grenoble Alpes, CNRS, Grenoble INP, F-38000 Grenoble, FranceFor the first time, we have implemented new kinds of ISFETs based on silicon carbide (SiC). Thanks to its chemical inertness, SiC is an interesting semiconductor for the development of chemically robust and biocompatible ISFETs. The challenge is to replace Si NWFETs for biochemical sensing due to the lack of long-term stability of Si NWs in aqueous solutions. More particularly, we fabricated a micro/nanowire SiC-based ion-sensitive junction field-effect transistor (SiC-ISJFET) and studied its sensitivity to pH variations. The obtained sensitivity reaches 500 mV/pH, making it the first SiC pH sensor with performance equaling that of the latest NWFET Si-based pH sensors.https://www.mdpi.com/2504-3900/97/1/98silicon carbide SiCpH sensorISFET |
| spellingShingle | Olfa Karker Konstantinos Zekentes Nicolaos Makris Edwige Bano Valérie Stambouli New SiC Microwire-Based Ion Sensitive Junction Field Effect Transistors (SiC ISJFETs) for pH Sensing Proceedings silicon carbide SiC pH sensor ISFET |
| title | New SiC Microwire-Based Ion Sensitive Junction Field Effect Transistors (SiC ISJFETs) for pH Sensing |
| title_full | New SiC Microwire-Based Ion Sensitive Junction Field Effect Transistors (SiC ISJFETs) for pH Sensing |
| title_fullStr | New SiC Microwire-Based Ion Sensitive Junction Field Effect Transistors (SiC ISJFETs) for pH Sensing |
| title_full_unstemmed | New SiC Microwire-Based Ion Sensitive Junction Field Effect Transistors (SiC ISJFETs) for pH Sensing |
| title_short | New SiC Microwire-Based Ion Sensitive Junction Field Effect Transistors (SiC ISJFETs) for pH Sensing |
| title_sort | new sic microwire based ion sensitive junction field effect transistors sic isjfets for ph sensing |
| topic | silicon carbide SiC pH sensor ISFET |
| url | https://www.mdpi.com/2504-3900/97/1/98 |
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