Emulation of Synaptic Plasticity in WO3‐Based Ion‐Gated Transistors
Abstract Neuromorphic systems, inspired by the human brain, promise significant advancements in computational efficiency and power consumption by integrating processing and memory functions, thereby addressing the von Neumann bottleneck. This paper explores the synaptic plasticity of a WO3‐based ion...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-06-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400807 |
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| author | Ramin Karimi Azari Luan Pereira Camargo José Ramón Herrera Garza Liam Collins Wan− Yu Tsai Lariel Chagas da Silva Neres Patrick Dang Martin Schwellberger Barbosa Clara Santato |
| author_facet | Ramin Karimi Azari Luan Pereira Camargo José Ramón Herrera Garza Liam Collins Wan− Yu Tsai Lariel Chagas da Silva Neres Patrick Dang Martin Schwellberger Barbosa Clara Santato |
| author_sort | Ramin Karimi Azari |
| collection | DOAJ |
| description | Abstract Neuromorphic systems, inspired by the human brain, promise significant advancements in computational efficiency and power consumption by integrating processing and memory functions, thereby addressing the von Neumann bottleneck. This paper explores the synaptic plasticity of a WO3‐based ion‐gated transistor (IGT) in [EMIM][TFSI] and a 0.1 mol L−1 LiTFSI in [EMIM][TFSI] for neuromorphic computing applications. Cyclic voltammetry (CV), transistor characteristics, and atomic force microscopy (AFM) force–distance (FD) profiling analyses reveal that Li+ brings about ion intercalation, together with higher mobility and conductance, and slower response time (τ). WO3 IGTs exhibit spike amplitude‐dependent plasticity (SADP), spike number‐dependent plasticity (SNDP), spike duration‐dependent plasticity (SDDP), frequency‐dependent plasticity (FDP), and paired‐pulse facilitation (PPF), which are all crucial for mimicking biological synaptic functions and understanding how to achieve different types of plasticity in the same IGT. The findings underscore the importance of selecting the appropriate ionic medium to optimize the performance of synaptic transistors, enabling the development of neuromorphic systems capable of adaptive learning and real‐time processing, which are essential for applications in artificial intelligence (AI). |
| format | Article |
| id | doaj-art-bb376d5dce124b409c045cd38d71c15e |
| institution | OA Journals |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-06-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-bb376d5dce124b409c045cd38d71c15e2025-08-20T02:24:22ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-06-01118n/an/a10.1002/aelm.202400807Emulation of Synaptic Plasticity in WO3‐Based Ion‐Gated TransistorsRamin Karimi Azari0Luan Pereira Camargo1José Ramón Herrera Garza2Liam Collins3Wan− Yu Tsai4Lariel Chagas da Silva Neres5Patrick Dang6Martin Schwellberger Barbosa7Clara Santato8Engineering Physics Polytechnique Montreal 2500 Ch. Polytechnique Montréal QC H3T 1J4 CanadaEngineering Physics Polytechnique Montreal 2500 Ch. Polytechnique Montréal QC H3T 1J4 CanadaEngineering Physics Polytechnique Montreal 2500 Ch. Polytechnique Montréal QC H3T 1J4 CanadaOak Ridge National Laboratory 1 Bethel Valley Road Oak Ridge TN 37830 USAOak Ridge National Laboratory 1 Bethel Valley Road Oak Ridge TN 37830 USAEngineering Physics Polytechnique Montreal 2500 Ch. Polytechnique Montréal QC H3T 1J4 CanadaEngineering Physics Polytechnique Montreal 2500 Ch. Polytechnique Montréal QC H3T 1J4 CanadaInstitute of Chemistry Federal University of Goiás (UFG) Goiânia GO 74690‐900 BrazilEngineering Physics Polytechnique Montreal 2500 Ch. Polytechnique Montréal QC H3T 1J4 CanadaAbstract Neuromorphic systems, inspired by the human brain, promise significant advancements in computational efficiency and power consumption by integrating processing and memory functions, thereby addressing the von Neumann bottleneck. This paper explores the synaptic plasticity of a WO3‐based ion‐gated transistor (IGT) in [EMIM][TFSI] and a 0.1 mol L−1 LiTFSI in [EMIM][TFSI] for neuromorphic computing applications. Cyclic voltammetry (CV), transistor characteristics, and atomic force microscopy (AFM) force–distance (FD) profiling analyses reveal that Li+ brings about ion intercalation, together with higher mobility and conductance, and slower response time (τ). WO3 IGTs exhibit spike amplitude‐dependent plasticity (SADP), spike number‐dependent plasticity (SNDP), spike duration‐dependent plasticity (SDDP), frequency‐dependent plasticity (FDP), and paired‐pulse facilitation (PPF), which are all crucial for mimicking biological synaptic functions and understanding how to achieve different types of plasticity in the same IGT. The findings underscore the importance of selecting the appropriate ionic medium to optimize the performance of synaptic transistors, enabling the development of neuromorphic systems capable of adaptive learning and real‐time processing, which are essential for applications in artificial intelligence (AI).https://doi.org/10.1002/aelm.202400807ion gated transistorsion gating mediaion intercalationneuromorphic computingsynaptic plasticitysynaptic transistors |
| spellingShingle | Ramin Karimi Azari Luan Pereira Camargo José Ramón Herrera Garza Liam Collins Wan− Yu Tsai Lariel Chagas da Silva Neres Patrick Dang Martin Schwellberger Barbosa Clara Santato Emulation of Synaptic Plasticity in WO3‐Based Ion‐Gated Transistors Advanced Electronic Materials ion gated transistors ion gating media ion intercalation neuromorphic computing synaptic plasticity synaptic transistors |
| title | Emulation of Synaptic Plasticity in WO3‐Based Ion‐Gated Transistors |
| title_full | Emulation of Synaptic Plasticity in WO3‐Based Ion‐Gated Transistors |
| title_fullStr | Emulation of Synaptic Plasticity in WO3‐Based Ion‐Gated Transistors |
| title_full_unstemmed | Emulation of Synaptic Plasticity in WO3‐Based Ion‐Gated Transistors |
| title_short | Emulation of Synaptic Plasticity in WO3‐Based Ion‐Gated Transistors |
| title_sort | emulation of synaptic plasticity in wo3 based ion gated transistors |
| topic | ion gated transistors ion gating media ion intercalation neuromorphic computing synaptic plasticity synaptic transistors |
| url | https://doi.org/10.1002/aelm.202400807 |
| work_keys_str_mv | AT raminkarimiazari emulationofsynapticplasticityinwo3basediongatedtransistors AT luanpereiracamargo emulationofsynapticplasticityinwo3basediongatedtransistors AT joseramonherreragarza emulationofsynapticplasticityinwo3basediongatedtransistors AT liamcollins emulationofsynapticplasticityinwo3basediongatedtransistors AT wanyutsai emulationofsynapticplasticityinwo3basediongatedtransistors AT larielchagasdasilvaneres emulationofsynapticplasticityinwo3basediongatedtransistors AT patrickdang emulationofsynapticplasticityinwo3basediongatedtransistors AT martinschwellbergerbarbosa emulationofsynapticplasticityinwo3basediongatedtransistors AT clarasantato emulationofsynapticplasticityinwo3basediongatedtransistors |