The Barrier Inhomogeneity and the Electrical Characteristics of W/Au <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes
In this work, the electrical properties of the Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes (SBDs) using W/Au as the Schottky metal were investigated. Due to the 450 °C post-anode annealing (PAA), the reduced oxygen vacancy defects on the <i>β</i>-Ga<sub...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-03-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/16/4/369 |
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| Summary: | In this work, the electrical properties of the Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes (SBDs) using W/Au as the Schottky metal were investigated. Due to the 450 °C post-anode annealing (PAA), the reduced oxygen vacancy defects on the <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> surface resulted in the improvement in the forward characteristics of the W/Au Ga<sub>2</sub>O<sub>3</sub> Schottky diode, and the breakdown voltage was significantly enhanced, increasing by 56.25% from 400 V to 625 V after PAA treatment. Additionally, the temperature dependence of barrier heights and ideality factors was analyzed using the thermionic emission (TE) model combined with a Gaussian distribution of barrier heights. Post-annealing reduced the apparent barrier height standard deviation from 112 meV to 92 meV, indicating a decrease in barrier height fluctuations. And the modified Richardson constants calculated for the as-deposited and annealed samples were in close agreement with the theoretical value, demonstrating that the barrier inhomogeneity of the W/Au Ga<sub>2</sub>O<sub>3</sub> SBDs can be accurately explained using the TE model with a Gaussian distribution of barrier heights. |
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| ISSN: | 2072-666X |