Process-Parameter-Dependent Structural, Electrical, and Optical Properties of Reactive Magnetron Sputtered Ag-Cu-O Films
Silver-copper-oxide thin films were formed by RF magnetron sputtering technique using Ag80Cu20 target at various oxygen partial pressures in the range 5 × 10−3–8 ×10−2 Pa and substrate temperatures in the range 303–523 K. The effect of oxygen partial pressure and substrate temperature on the struct...
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| Format: | Article |
| Language: | English |
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Wiley
2011-01-01
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| Series: | Journal of Nanotechnology |
| Online Access: | http://dx.doi.org/10.1155/2011/986021 |
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| author | P. Narayana Reddy A. Sreedhar M. Hari Prasad Reddy S. Uthanna J. F. Pierson |
| author_facet | P. Narayana Reddy A. Sreedhar M. Hari Prasad Reddy S. Uthanna J. F. Pierson |
| author_sort | P. Narayana Reddy |
| collection | DOAJ |
| description | Silver-copper-oxide thin films were formed by RF magnetron sputtering technique using Ag80Cu20 target at various oxygen partial pressures in the range 5 × 10−3–8 ×10−2 Pa and substrate temperatures in the range 303–523 K. The effect of oxygen partial pressure and substrate temperature on the structure and surface morphology and electrical and optical properties of the films were studied. The Ag-Cu-O films formed at room temperature (303 K) and at low oxygen partial pressure of 5 × 10−3 Pa were mixed phase of Ag2Cu2O3 and Ag, while those deposited at 2 × 10−2 Pa were composed of Ag2Cu2O4 and Ag2Cu2O3 phases. The crystallinity of the films formed at oxygen partial pressure of 2 × 10−2 Pa increased with the increase of substrate temperature from 303 to 423 K. Further increase of substrate temperature to 523 K, the films were decomposed in to Ag2O and Ag phases. The electrical resistivity of the films decreased from 0.8 Ωcm with the increase of substrate temperature from 303 to 473 K due to improvement in the crystallinity of the phase. The optical band gap of the Ag-Cu-O films increased from 1.47 to 1.83 eV with the increase of substrate temperature from 303 to 473 K. |
| format | Article |
| id | doaj-art-bac59d0377234dd6b2d5e46974eb3a63 |
| institution | Kabale University |
| issn | 1687-9503 1687-9511 |
| language | English |
| publishDate | 2011-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Journal of Nanotechnology |
| spelling | doaj-art-bac59d0377234dd6b2d5e46974eb3a632025-02-03T06:08:23ZengWileyJournal of Nanotechnology1687-95031687-95112011-01-01201110.1155/2011/986021986021Process-Parameter-Dependent Structural, Electrical, and Optical Properties of Reactive Magnetron Sputtered Ag-Cu-O FilmsP. Narayana Reddy0A. Sreedhar1M. Hari Prasad Reddy2S. Uthanna3J. F. Pierson4Department of Physics, Sri Venkateswara University, Tirupati 517 502, IndiaDepartment of Physics, Sri Venkateswara University, Tirupati 517 502, IndiaDepartment of Physics, Sri Venkateswara University, Tirupati 517 502, IndiaDepartment of Physics, Sri Venkateswara University, Tirupati 517 502, IndiaInstitut Jean Lamour (UMR CNRS 7198), Départment CP2S, Ecole des Mines, Nancy Universite, 54042 Nancy Cedex, FranceSilver-copper-oxide thin films were formed by RF magnetron sputtering technique using Ag80Cu20 target at various oxygen partial pressures in the range 5 × 10−3–8 ×10−2 Pa and substrate temperatures in the range 303–523 K. The effect of oxygen partial pressure and substrate temperature on the structure and surface morphology and electrical and optical properties of the films were studied. The Ag-Cu-O films formed at room temperature (303 K) and at low oxygen partial pressure of 5 × 10−3 Pa were mixed phase of Ag2Cu2O3 and Ag, while those deposited at 2 × 10−2 Pa were composed of Ag2Cu2O4 and Ag2Cu2O3 phases. The crystallinity of the films formed at oxygen partial pressure of 2 × 10−2 Pa increased with the increase of substrate temperature from 303 to 423 K. Further increase of substrate temperature to 523 K, the films were decomposed in to Ag2O and Ag phases. The electrical resistivity of the films decreased from 0.8 Ωcm with the increase of substrate temperature from 303 to 473 K due to improvement in the crystallinity of the phase. The optical band gap of the Ag-Cu-O films increased from 1.47 to 1.83 eV with the increase of substrate temperature from 303 to 473 K.http://dx.doi.org/10.1155/2011/986021 |
| spellingShingle | P. Narayana Reddy A. Sreedhar M. Hari Prasad Reddy S. Uthanna J. F. Pierson Process-Parameter-Dependent Structural, Electrical, and Optical Properties of Reactive Magnetron Sputtered Ag-Cu-O Films Journal of Nanotechnology |
| title | Process-Parameter-Dependent Structural, Electrical, and Optical Properties of Reactive Magnetron Sputtered Ag-Cu-O Films |
| title_full | Process-Parameter-Dependent Structural, Electrical, and Optical Properties of Reactive Magnetron Sputtered Ag-Cu-O Films |
| title_fullStr | Process-Parameter-Dependent Structural, Electrical, and Optical Properties of Reactive Magnetron Sputtered Ag-Cu-O Films |
| title_full_unstemmed | Process-Parameter-Dependent Structural, Electrical, and Optical Properties of Reactive Magnetron Sputtered Ag-Cu-O Films |
| title_short | Process-Parameter-Dependent Structural, Electrical, and Optical Properties of Reactive Magnetron Sputtered Ag-Cu-O Films |
| title_sort | process parameter dependent structural electrical and optical properties of reactive magnetron sputtered ag cu o films |
| url | http://dx.doi.org/10.1155/2011/986021 |
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