Fast carbidization of silicon in additive manufactured Si-C-SiC composite
Silicon carbide-based composites are advantageous material for electronic industry. Their application is limited by the difficulty to fabricate complex structural parts. This research used powder bed additive manufacturing technology, particularly selective laser melting, to manufacture silicon carb...
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| Language: | English |
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Elsevier
2025-03-01
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| Series: | Results in Materials |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590048X24001274 |
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| author | Tsovinar Ghaltaghchyan Khachik Nazaretyan Viktorya Rstakyan Marina Aghayan |
| author_facet | Tsovinar Ghaltaghchyan Khachik Nazaretyan Viktorya Rstakyan Marina Aghayan |
| author_sort | Tsovinar Ghaltaghchyan |
| collection | DOAJ |
| description | Silicon carbide-based composites are advantageous material for electronic industry. Their application is limited by the difficulty to fabricate complex structural parts. This research used powder bed additive manufacturing technology, particularly selective laser melting, to manufacture silicon carbide-based composite. However, during the laser sintering silicon carbide decomposed to silicon and carbon. Further carbidization of free silicon faces the challenge of silicon carbide (SiC) formation, which can prevent further reaction between the reacting elements.To enhance the carbidization process we heated the samples with ultra-high heating rates (2000 °C/min) employing High-Speed Temperature Scanning (HSTS) technique using direct electrical current to heat the sample. Formation of silicon carbide takes place, achieving higher density of the samples. We have compared the results with the samples heated at relatively lower heating rates (100 °C/min). The mechanism of interaction was explained.The heating rate has critical effect on silicon carbide formation, impacting the atomic diffusion rate between silicon and carbon, final microstructure and density of the samples. The silicon carbidization process can be achieved by direct heating the samples at ultra-high heating rates. |
| format | Article |
| id | doaj-art-ba73ff9ab1be499d8ecba2b28a411e6f |
| institution | DOAJ |
| issn | 2590-048X |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Materials |
| spelling | doaj-art-ba73ff9ab1be499d8ecba2b28a411e6f2025-08-20T02:58:37ZengElsevierResults in Materials2590-048X2025-03-012510065310.1016/j.rinma.2024.100653Fast carbidization of silicon in additive manufactured Si-C-SiC compositeTsovinar Ghaltaghchyan0Khachik Nazaretyan1Viktorya Rstakyan2Marina Aghayan3A.B. Nalbandyan Institute of Chemical Physics, National Academy of Sciences of the Republic of Armenia, P. Sevak 5/2, Yerevan, 0014, ArmeniaA.B. Nalbandyan Institute of Chemical Physics, National Academy of Sciences of the Republic of Armenia, P. Sevak 5/2, Yerevan, 0014, ArmeniaA.B. Nalbandyan Institute of Chemical Physics, National Academy of Sciences of the Republic of Armenia, P. Sevak 5/2, Yerevan, 0014, Armenia; Corresponding author.A.B. Nalbandyan Institute of Chemical Physics, National Academy of Sciences of the Republic of Armenia, P. Sevak 5/2, Yerevan, 0014, Armenia; FACT Industries, Raja 15, 12618 Tallinn, EstoniaSilicon carbide-based composites are advantageous material for electronic industry. Their application is limited by the difficulty to fabricate complex structural parts. This research used powder bed additive manufacturing technology, particularly selective laser melting, to manufacture silicon carbide-based composite. However, during the laser sintering silicon carbide decomposed to silicon and carbon. Further carbidization of free silicon faces the challenge of silicon carbide (SiC) formation, which can prevent further reaction between the reacting elements.To enhance the carbidization process we heated the samples with ultra-high heating rates (2000 °C/min) employing High-Speed Temperature Scanning (HSTS) technique using direct electrical current to heat the sample. Formation of silicon carbide takes place, achieving higher density of the samples. We have compared the results with the samples heated at relatively lower heating rates (100 °C/min). The mechanism of interaction was explained.The heating rate has critical effect on silicon carbide formation, impacting the atomic diffusion rate between silicon and carbon, final microstructure and density of the samples. The silicon carbidization process can be achieved by direct heating the samples at ultra-high heating rates.http://www.sciencedirect.com/science/article/pii/S2590048X24001274Silicon carbideSLM3D printingSinteringCarbidizationHigh-speed temperature scanning (HSTS) |
| spellingShingle | Tsovinar Ghaltaghchyan Khachik Nazaretyan Viktorya Rstakyan Marina Aghayan Fast carbidization of silicon in additive manufactured Si-C-SiC composite Results in Materials Silicon carbide SLM 3D printing Sintering Carbidization High-speed temperature scanning (HSTS) |
| title | Fast carbidization of silicon in additive manufactured Si-C-SiC composite |
| title_full | Fast carbidization of silicon in additive manufactured Si-C-SiC composite |
| title_fullStr | Fast carbidization of silicon in additive manufactured Si-C-SiC composite |
| title_full_unstemmed | Fast carbidization of silicon in additive manufactured Si-C-SiC composite |
| title_short | Fast carbidization of silicon in additive manufactured Si-C-SiC composite |
| title_sort | fast carbidization of silicon in additive manufactured si c sic composite |
| topic | Silicon carbide SLM 3D printing Sintering Carbidization High-speed temperature scanning (HSTS) |
| url | http://www.sciencedirect.com/science/article/pii/S2590048X24001274 |
| work_keys_str_mv | AT tsovinarghaltaghchyan fastcarbidizationofsiliconinadditivemanufacturedsicsiccomposite AT khachiknazaretyan fastcarbidizationofsiliconinadditivemanufacturedsicsiccomposite AT viktoryarstakyan fastcarbidizationofsiliconinadditivemanufacturedsicsiccomposite AT marinaaghayan fastcarbidizationofsiliconinadditivemanufacturedsicsiccomposite |