Polarization Enhanced GaN Avalanche Photodiodes With p-type In<sub>0.05</sub>Ga<sub>0.95</sub>N Layer

Polarization Enhanced GaN Avalanche Photodiodes With p-type In<sub>0.05</sub>Ga<sub>0.95</sub>N Layer

In this letter, novel heterostructure p-i-n GaN avalanche photodiodes (APDs) with p-type In<sub>0.05</sub>Ga<sub>0.95</sub>N layer are proposed and analyzed through Silvaco Atlas simulations. The introduction of the In<sub>0.05</sub>Ga<sub>0.95</sub>N...

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Bibliographic Details
Main Authors: Haiping Wang, Haifan You, Danfeng Pan, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Photonics Journal
Subjects:
GaN
avalanche photodiodes
p-type In<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX">$_{0.05}$</tex-math> </inline-formula>Ga<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX">$_{0.95}$</tex-math> </inline-formula>N
polarization
hole concentration
Silvaco
Online Access:https://ieeexplore.ieee.org/document/8972413/
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Summary:In this letter, novel heterostructure p-i-n GaN avalanche photodiodes (APDs) with p-type In<sub>0.05</sub>Ga<sub>0.95</sub>N layer are proposed and analyzed through Silvaco Atlas simulations. The introduction of the In<sub>0.05</sub>Ga<sub>0.95</sub>N layer generates a negative polarization charge at the p-In<sub>0.05</sub>Ga<sub>0.95</sub>N&#x002F;i-GaN heterojunction interface via the piezoelectric polarization effect. Three times higher hole concentration in the p-In<sub>0.05</sub>Ga<sub>0.95</sub>N layer is obtained due to the smaller activation energy of the Mg dopant. Induced polarization charge and increased hole concentration work together to reduce the voltage drop in the p-In<sub>0.05</sub>Ga<sub>0.95</sub>N layer and enhance the electric field intensity in the i-GaN layer. The calculated results show that the heterostructure APD demonstrates a reduced operating voltage of more than 26&#x00A0;V and an improved multiplication gain by an order of magnitude in comparison to the conventional one.
ISSN:1943-0655

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