Design and analysis of quasi-vertical multi-fin GaN power devices based on epitaxially grown GaN-on-sapphire
This study presents the design and analysis of a quasi-vertical multi-fin gallium nitride (GaN) power device based on GaN-on-sapphire epitaxy, simulated using three-dimensional technology computer-aided design. The proposed structure aims to overcome the limitations of lateral high-electron-mobility...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-03-01
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| Series: | Journal of Science: Advanced Materials and Devices |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2468217925000012 |
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