APA (7th ed.) Citation

Hong, J. W., Lee, S. H., Park, J., Kim, M. S., Bae, S. J., Koh, W. S., . . . Kang, I. M. Design and analysis of quasi-vertical multi-fin GaN power devices based on epitaxially grown GaN-on-sapphire. Elsevier.

Chicago Style (17th ed.) Citation

Hong, Jeong Woo, Sang Ho Lee, Jin Park, Min Seok Kim, Seung Ji Bae, Won Suk Koh, Gang San Yun, and In Man Kang. Design and Analysis of Quasi-vertical Multi-fin GaN Power Devices Based on Epitaxially Grown GaN-on-sapphire. Elsevier.

MLA (9th ed.) Citation

Hong, Jeong Woo, et al. Design and Analysis of Quasi-vertical Multi-fin GaN Power Devices Based on Epitaxially Grown GaN-on-sapphire. Elsevier.