Electrical model of the 90 nm MOSFET
The technique of extraction and identification of electrical models parameters for nanoscale semiconductor devices based on optimization methods application is developed. The proposed approach efficiency to identification, extraction and optimization of parameters of semiconductor devices electrical...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/864 |
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