Electrical model of the 90 nm MOSFET
The technique of extraction and identification of electrical models parameters for nanoscale semiconductor devices based on optimization methods application is developed. The proposed approach efficiency to identification, extraction and optimization of parameters of semiconductor devices electrical...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
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| Online Access: | https://doklady.bsuir.by/jour/article/view/864 |
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| _version_ | 1849398358568861696 |
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| author | A. M. Borovik V. T. Khanko V. R. Stempitsky |
| author_facet | A. M. Borovik V. T. Khanko V. R. Stempitsky |
| author_sort | A. M. Borovik |
| collection | DOAJ |
| description | The technique of extraction and identification of electrical models parameters for nanoscale semiconductor devices based on optimization methods application is developed. The proposed approach efficiency to identification, extraction and optimization of parameters of semiconductor devices electrical models is demonstrated by examples of BSIM4 and HiSIM2 models SPICE parameters extraction for standard design MOS transistors manufactured using the technology providing minimum channel length of 90 nm. |
| format | Article |
| id | doaj-art-ba1c5d56458b4e9b986692824d60d3e6 |
| institution | Kabale University |
| issn | 1729-7648 |
| language | Russian |
| publishDate | 2019-06-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj-art-ba1c5d56458b4e9b986692824d60d3e62025-08-20T03:38:38ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-01036569863Electrical model of the 90 nm MOSFETA. M. Borovik0V. T. Khanko1V. R. Stempitsky2Belarusian state university of informatics and radioelectronicsBelarusian state university of informatics and radioelectronicsBelarusian state university of informatics and radioelectronicsThe technique of extraction and identification of electrical models parameters for nanoscale semiconductor devices based on optimization methods application is developed. The proposed approach efficiency to identification, extraction and optimization of parameters of semiconductor devices electrical models is demonstrated by examples of BSIM4 and HiSIM2 models SPICE parameters extraction for standard design MOS transistors manufactured using the technology providing minimum channel length of 90 nm.https://doklady.bsuir.by/jour/article/view/864electrical modelparameters extractionoptimizationnanoscale mosfet |
| spellingShingle | A. M. Borovik V. T. Khanko V. R. Stempitsky Electrical model of the 90 nm MOSFET Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki electrical model parameters extraction optimization nanoscale mosfet |
| title | Electrical model of the 90 nm MOSFET |
| title_full | Electrical model of the 90 nm MOSFET |
| title_fullStr | Electrical model of the 90 nm MOSFET |
| title_full_unstemmed | Electrical model of the 90 nm MOSFET |
| title_short | Electrical model of the 90 nm MOSFET |
| title_sort | electrical model of the 90 nm mosfet |
| topic | electrical model parameters extraction optimization nanoscale mosfet |
| url | https://doklady.bsuir.by/jour/article/view/864 |
| work_keys_str_mv | AT amborovik electricalmodelofthe90nmmosfet AT vtkhanko electricalmodelofthe90nmmosfet AT vrstempitsky electricalmodelofthe90nmmosfet |