Imprinting Electrically Switchable Scalar Spin Chirality by Anisotropic Strain in a Kagome Antiferromagnet
Abstract Topological chiral antiferromagnets, such as Mn3Sn, are emerging as promising materials for next‐generation spintronic devices due to their intrinsic transport properties linked to exotic magnetic configurations. Here, it is demonstrated that anisotropic strain in Mn3Sn thin films offers a...
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| Format: | Article |
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Wiley
2025-08-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202502569 |
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| author | Debjoty Paul Shivesh Yadav Shikhar Gupta Bikash Patra Nilesh Kulkarni Debashis Mondal Kaushal Gavankar Sourav K. Sahu Biswarup Satpati Bahadur Singh Owen Benton Shouvik Chatterjee |
| author_facet | Debjoty Paul Shivesh Yadav Shikhar Gupta Bikash Patra Nilesh Kulkarni Debashis Mondal Kaushal Gavankar Sourav K. Sahu Biswarup Satpati Bahadur Singh Owen Benton Shouvik Chatterjee |
| author_sort | Debjoty Paul |
| collection | DOAJ |
| description | Abstract Topological chiral antiferromagnets, such as Mn3Sn, are emerging as promising materials for next‐generation spintronic devices due to their intrinsic transport properties linked to exotic magnetic configurations. Here, it is demonstrated that anisotropic strain in Mn3Sn thin films offers a novel approach to manipulate the magnetic ground state, unlocking new functionalities in this material. Anisotropic strain reduces the point group symmetry of the manganese (Mn) Kagome triangles from C3v to C1, significantly altering the energy landscape of the magnetic states in Mn3Sn. This symmetry reduction enables even a tiny in‐plane Dzyaloshinskii‐Moriya (DM) interaction to induce canting of the Mn spins out of the Kagome plane. The modified magnetic ground state introduces a finite scalar spin chirality and results in a significant Berry phase in momentum space. Consequently, a large anomalous Hall effect emerges in the Kagome plane at room temperature ‐ an effect that is absent in the bulk material. Moreover, this twofold degenerate magnetic state enables the creation of multiple‐stable, non‐volatile anomalous Hall resistance (AHR) memory states. These states are field‐stable and can be controlled by thermal‐assisted current‐induced magnetization switching, requiring modest current densities and small bias fields, thereby offering a compelling new functionality in Mn3Sn for spintronic applications. |
| format | Article |
| id | doaj-art-ba073d2626f04a268d2a84e5f7aa1a87 |
| institution | Kabale University |
| issn | 2198-3844 |
| language | English |
| publishDate | 2025-08-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj-art-ba073d2626f04a268d2a84e5f7aa1a872025-08-20T03:41:08ZengWileyAdvanced Science2198-38442025-08-011229n/an/a10.1002/advs.202502569Imprinting Electrically Switchable Scalar Spin Chirality by Anisotropic Strain in a Kagome AntiferromagnetDebjoty Paul0Shivesh Yadav1Shikhar Gupta2Bikash Patra3Nilesh Kulkarni4Debashis Mondal5Kaushal Gavankar6Sourav K. Sahu7Biswarup Satpati8Bahadur Singh9Owen Benton10Shouvik Chatterjee11Department of Condensed Matter Physics and Materials Science Tata Institute of Fundamental Research Homi Bhabha Road Mumbai 400005 IndiaDepartment of Condensed Matter Physics and Materials Science Tata Institute of Fundamental Research Homi Bhabha Road Mumbai 400005 IndiaDepartment of Condensed Matter Physics and Materials Science Tata Institute of Fundamental Research Homi Bhabha Road Mumbai 400005 IndiaDepartment of Condensed Matter Physics and Materials Science Tata Institute of Fundamental Research Homi Bhabha Road Mumbai 400005 IndiaDepartment of Condensed Matter Physics and Materials Science Tata Institute of Fundamental Research Homi Bhabha Road Mumbai 400005 IndiaDepartment of Condensed Matter Physics and Materials Science Tata Institute of Fundamental Research Homi Bhabha Road Mumbai 400005 IndiaDepartment of Condensed Matter Physics and Materials Science Tata Institute of Fundamental Research Homi Bhabha Road Mumbai 400005 IndiaDepartment of Condensed Matter Physics and Materials Science Tata Institute of Fundamental Research Homi Bhabha Road Mumbai 400005 IndiaSurface Physics & Material Science Division Saha Institute of Nuclear Physics A CI of Homi Bhabha National Institute 1/AF Bidhannagar Kolkata 700064 IndiaDepartment of Condensed Matter Physics and Materials Science Tata Institute of Fundamental Research Homi Bhabha Road Mumbai 400005 IndiaSchool of Physical and Chemical Sciences Queen Mary University of London London E1 4NS UKDepartment of Condensed Matter Physics and Materials Science Tata Institute of Fundamental Research Homi Bhabha Road Mumbai 400005 IndiaAbstract Topological chiral antiferromagnets, such as Mn3Sn, are emerging as promising materials for next‐generation spintronic devices due to their intrinsic transport properties linked to exotic magnetic configurations. Here, it is demonstrated that anisotropic strain in Mn3Sn thin films offers a novel approach to manipulate the magnetic ground state, unlocking new functionalities in this material. Anisotropic strain reduces the point group symmetry of the manganese (Mn) Kagome triangles from C3v to C1, significantly altering the energy landscape of the magnetic states in Mn3Sn. This symmetry reduction enables even a tiny in‐plane Dzyaloshinskii‐Moriya (DM) interaction to induce canting of the Mn spins out of the Kagome plane. The modified magnetic ground state introduces a finite scalar spin chirality and results in a significant Berry phase in momentum space. Consequently, a large anomalous Hall effect emerges in the Kagome plane at room temperature ‐ an effect that is absent in the bulk material. Moreover, this twofold degenerate magnetic state enables the creation of multiple‐stable, non‐volatile anomalous Hall resistance (AHR) memory states. These states are field‐stable and can be controlled by thermal‐assisted current‐induced magnetization switching, requiring modest current densities and small bias fields, thereby offering a compelling new functionality in Mn3Sn for spintronic applications.https://doi.org/10.1002/advs.202502569anomalous hall effectanisotropic strainepitaxykagome antiferromagnetsscalar spin chirality |
| spellingShingle | Debjoty Paul Shivesh Yadav Shikhar Gupta Bikash Patra Nilesh Kulkarni Debashis Mondal Kaushal Gavankar Sourav K. Sahu Biswarup Satpati Bahadur Singh Owen Benton Shouvik Chatterjee Imprinting Electrically Switchable Scalar Spin Chirality by Anisotropic Strain in a Kagome Antiferromagnet Advanced Science anomalous hall effect anisotropic strain epitaxy kagome antiferromagnets scalar spin chirality |
| title | Imprinting Electrically Switchable Scalar Spin Chirality by Anisotropic Strain in a Kagome Antiferromagnet |
| title_full | Imprinting Electrically Switchable Scalar Spin Chirality by Anisotropic Strain in a Kagome Antiferromagnet |
| title_fullStr | Imprinting Electrically Switchable Scalar Spin Chirality by Anisotropic Strain in a Kagome Antiferromagnet |
| title_full_unstemmed | Imprinting Electrically Switchable Scalar Spin Chirality by Anisotropic Strain in a Kagome Antiferromagnet |
| title_short | Imprinting Electrically Switchable Scalar Spin Chirality by Anisotropic Strain in a Kagome Antiferromagnet |
| title_sort | imprinting electrically switchable scalar spin chirality by anisotropic strain in a kagome antiferromagnet |
| topic | anomalous hall effect anisotropic strain epitaxy kagome antiferromagnets scalar spin chirality |
| url | https://doi.org/10.1002/advs.202502569 |
| work_keys_str_mv | AT debjotypaul imprintingelectricallyswitchablescalarspinchiralitybyanisotropicstraininakagomeantiferromagnet AT shiveshyadav imprintingelectricallyswitchablescalarspinchiralitybyanisotropicstraininakagomeantiferromagnet AT shikhargupta imprintingelectricallyswitchablescalarspinchiralitybyanisotropicstraininakagomeantiferromagnet AT bikashpatra imprintingelectricallyswitchablescalarspinchiralitybyanisotropicstraininakagomeantiferromagnet AT nileshkulkarni imprintingelectricallyswitchablescalarspinchiralitybyanisotropicstraininakagomeantiferromagnet AT debashismondal imprintingelectricallyswitchablescalarspinchiralitybyanisotropicstraininakagomeantiferromagnet AT kaushalgavankar imprintingelectricallyswitchablescalarspinchiralitybyanisotropicstraininakagomeantiferromagnet AT souravksahu imprintingelectricallyswitchablescalarspinchiralitybyanisotropicstraininakagomeantiferromagnet AT biswarupsatpati imprintingelectricallyswitchablescalarspinchiralitybyanisotropicstraininakagomeantiferromagnet AT bahadursingh imprintingelectricallyswitchablescalarspinchiralitybyanisotropicstraininakagomeantiferromagnet AT owenbenton imprintingelectricallyswitchablescalarspinchiralitybyanisotropicstraininakagomeantiferromagnet AT shouvikchatterjee imprintingelectricallyswitchablescalarspinchiralitybyanisotropicstraininakagomeantiferromagnet |