From 1 Sun to 10 Suns c-Si Cells by Optimizing Metal Grid, Metal Resistance, and Junction Depth
Use of a solar cell in concentrator PV technology requires reduction in its series resistance in order to minimize the resistive power losses. The present paper discusses a methodology of reducing the series resistance of a commercial c-Si solar cell for concentrator applications, in the range of 2...
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| Format: | Article |
| Language: | English |
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Wiley
2009-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2009/827402 |
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| author | Vikrant A. Chaudhari Chetan S. Solanki |
| author_facet | Vikrant A. Chaudhari Chetan S. Solanki |
| author_sort | Vikrant A. Chaudhari |
| collection | DOAJ |
| description | Use of a solar cell in concentrator PV technology requires reduction in its series resistance in order to minimize the resistive power losses. The present paper discusses a methodology of reducing the series resistance of a commercial c-Si solar cell for concentrator applications, in the range of 2 to 10 suns. Step by step optimization of commercial cell in terms of grid geometry, junction depth, and electroplating of the front metal contacts is proposed. A model of resistance network of solar cell is developed and used for the optimization. Efficiency of unoptimized commercial cell at 10 suns drops by 30% of its 1 sun value corresponding to resistive power loss of about 42%. The optimized cell with grid optimization, junction optimization, electroplating, and junction optimized with electroplated contacts cell gives resistive power loss of 20%, 16%, 11%, and 8%, respectively. An efficiency gain of 3% at 10 suns for fully optimized cell is estimated. |
| format | Article |
| id | doaj-art-b99e2a4a404140d78e13fc732b7c9633 |
| institution | DOAJ |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2009-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-b99e2a4a404140d78e13fc732b7c96332025-08-20T03:23:14ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2009-01-01200910.1155/2009/827402827402From 1 Sun to 10 Suns c-Si Cells by Optimizing Metal Grid, Metal Resistance, and Junction DepthVikrant A. Chaudhari0Chetan S. Solanki1Department of Energy Science and Engineering, Indian Institute of Technology Bombay, Powai Mumbai 400076, IndiaDepartment of Energy Science and Engineering, Indian Institute of Technology Bombay, Powai Mumbai 400076, IndiaUse of a solar cell in concentrator PV technology requires reduction in its series resistance in order to minimize the resistive power losses. The present paper discusses a methodology of reducing the series resistance of a commercial c-Si solar cell for concentrator applications, in the range of 2 to 10 suns. Step by step optimization of commercial cell in terms of grid geometry, junction depth, and electroplating of the front metal contacts is proposed. A model of resistance network of solar cell is developed and used for the optimization. Efficiency of unoptimized commercial cell at 10 suns drops by 30% of its 1 sun value corresponding to resistive power loss of about 42%. The optimized cell with grid optimization, junction optimization, electroplating, and junction optimized with electroplated contacts cell gives resistive power loss of 20%, 16%, 11%, and 8%, respectively. An efficiency gain of 3% at 10 suns for fully optimized cell is estimated.http://dx.doi.org/10.1155/2009/827402 |
| spellingShingle | Vikrant A. Chaudhari Chetan S. Solanki From 1 Sun to 10 Suns c-Si Cells by Optimizing Metal Grid, Metal Resistance, and Junction Depth International Journal of Photoenergy |
| title | From 1 Sun to 10 Suns c-Si Cells by Optimizing Metal Grid, Metal Resistance, and Junction Depth |
| title_full | From 1 Sun to 10 Suns c-Si Cells by Optimizing Metal Grid, Metal Resistance, and Junction Depth |
| title_fullStr | From 1 Sun to 10 Suns c-Si Cells by Optimizing Metal Grid, Metal Resistance, and Junction Depth |
| title_full_unstemmed | From 1 Sun to 10 Suns c-Si Cells by Optimizing Metal Grid, Metal Resistance, and Junction Depth |
| title_short | From 1 Sun to 10 Suns c-Si Cells by Optimizing Metal Grid, Metal Resistance, and Junction Depth |
| title_sort | from 1 sun to 10 suns c si cells by optimizing metal grid metal resistance and junction depth |
| url | http://dx.doi.org/10.1155/2009/827402 |
| work_keys_str_mv | AT vikrantachaudhari from1sunto10sunscsicellsbyoptimizingmetalgridmetalresistanceandjunctiondepth AT chetanssolanki from1sunto10sunscsicellsbyoptimizingmetalgridmetalresistanceandjunctiondepth |