Switching Characteristic of HiPak 6.5 kV IGBT and the Influence of Gate Unit

It presented the investigation on the reverse recovery of ABB HiPak 6 500 V/750 A IGBT module. For the first time, the forward recovery and the reverse recovery of diode and its anti-parallel connected IGBT were researched as a function of di/dt, and the impact on IGBT module was analyzed. It is con...

Full description

Saved in:
Bibliographic Details
Main Authors: Makan Chen, Raffael Schnell
Format: Article
Language:zho
Published: Editorial Office of Control and Information Technology 2015-01-01
Series:Kongzhi Yu Xinxi Jishu
Subjects:
Online Access:http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2015.02.006
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1849224823324016640
author Makan Chen
Raffael Schnell
author_facet Makan Chen
Raffael Schnell
author_sort Makan Chen
collection DOAJ
description It presented the investigation on the reverse recovery of ABB HiPak 6 500 V/750 A IGBT module. For the first time, the forward recovery and the reverse recovery of diode and its anti-parallel connected IGBT were researched as a function of di/dt, and the impact on IGBT module was analyzed. It is confirmed that di/dt plays a critical role in the reverse recovery process, where damage can occur both to IGBT and diode chips at excessive di/dt, leading to possible subsequent short circuit failure between phase-legs of the converter. The importance of an optimised match between IGBT and gate driver to ensure safe operation and full exploitation of HiPak robustness is highlighted.
format Article
id doaj-art-b98cbacf4c78484188ee79fff5a3e8ad
institution Kabale University
issn 2096-5427
language zho
publishDate 2015-01-01
publisher Editorial Office of Control and Information Technology
record_format Article
series Kongzhi Yu Xinxi Jishu
spelling doaj-art-b98cbacf4c78484188ee79fff5a3e8ad2025-08-25T06:53:56ZzhoEditorial Office of Control and Information TechnologyKongzhi Yu Xinxi Jishu2096-54272015-01-01303482325870Switching Characteristic of HiPak 6.5 kV IGBT and the Influence of Gate UnitMakan ChenRaffael SchnellIt presented the investigation on the reverse recovery of ABB HiPak 6 500 V/750 A IGBT module. For the first time, the forward recovery and the reverse recovery of diode and its anti-parallel connected IGBT were researched as a function of di/dt, and the impact on IGBT module was analyzed. It is confirmed that di/dt plays a critical role in the reverse recovery process, where damage can occur both to IGBT and diode chips at excessive di/dt, leading to possible subsequent short circuit failure between phase-legs of the converter. The importance of an optimised match between IGBT and gate driver to ensure safe operation and full exploitation of HiPak robustness is highlighted.http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2015.02.0066 500 V IGBTSPT+reverse recoverygate drivingdi/dtpeak powersecond type short-circuit (SCII)
spellingShingle Makan Chen
Raffael Schnell
Switching Characteristic of HiPak 6.5 kV IGBT and the Influence of Gate Unit
Kongzhi Yu Xinxi Jishu
6 500 V IGBT
SPT+
reverse recovery
gate driving
di/dt
peak power
second type short-circuit (SCII)
title Switching Characteristic of HiPak 6.5 kV IGBT and the Influence of Gate Unit
title_full Switching Characteristic of HiPak 6.5 kV IGBT and the Influence of Gate Unit
title_fullStr Switching Characteristic of HiPak 6.5 kV IGBT and the Influence of Gate Unit
title_full_unstemmed Switching Characteristic of HiPak 6.5 kV IGBT and the Influence of Gate Unit
title_short Switching Characteristic of HiPak 6.5 kV IGBT and the Influence of Gate Unit
title_sort switching characteristic of hipak 6 5 kv igbt and the influence of gate unit
topic 6 500 V IGBT
SPT+
reverse recovery
gate driving
di/dt
peak power
second type short-circuit (SCII)
url http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2015.02.006
work_keys_str_mv AT makanchen switchingcharacteristicofhipak65kvigbtandtheinfluenceofgateunit
AT raffaelschnell switchingcharacteristicofhipak65kvigbtandtheinfluenceofgateunit