Switching Characteristic of HiPak 6.5 kV IGBT and the Influence of Gate Unit
It presented the investigation on the reverse recovery of ABB HiPak 6 500 V/750 A IGBT module. For the first time, the forward recovery and the reverse recovery of diode and its anti-parallel connected IGBT were researched as a function of di/dt, and the impact on IGBT module was analyzed. It is con...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2015-01-01
|
| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2015.02.006 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | It presented the investigation on the reverse recovery of ABB HiPak 6 500 V/750 A IGBT module. For the first time, the forward recovery and the reverse recovery of diode and its anti-parallel connected IGBT were researched as a function of di/dt, and the impact on IGBT module was analyzed. It is confirmed that di/dt plays a critical role in the reverse recovery process, where damage can occur both to IGBT and diode chips at excessive di/dt, leading to possible subsequent short circuit failure between phase-legs of the converter. The importance of an optimised match between IGBT and gate driver to ensure safe operation and full exploitation of HiPak robustness is highlighted. |
|---|---|
| ISSN: | 2096-5427 |