Design of long‐wavelength infrared InAs/InAsSb type‐II superlattice avalanche photodetector with stepped grading layer
Abstract Weak response in long‐wavelength infrared (LWIR) detection has long been a perennial concern, significantly limiting the reliability of applications. Avalanche photodetectors (APDs) offer excellent responsivity but are plagued by high dark current during the multiplication process. Here, we...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2024-11-01
|
| Series: | Electron |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/elt2.73 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850211404496240640 |
|---|---|
| author | Keming Cheng Kai Shen Chuang Li Daqian Guo Hao Wang Jiang Wu |
| author_facet | Keming Cheng Kai Shen Chuang Li Daqian Guo Hao Wang Jiang Wu |
| author_sort | Keming Cheng |
| collection | DOAJ |
| description | Abstract Weak response in long‐wavelength infrared (LWIR) detection has long been a perennial concern, significantly limiting the reliability of applications. Avalanche photodetectors (APDs) offer excellent responsivity but are plagued by high dark current during the multiplication process. Here, we propose a high‐performance type‐II superlattices (T2SLs) LWIR APD to address these issues. The low Auger recombination rate of the InAs/InAsSb T2SLs absorption layer is exploited to reduce the dark current initially. AlAsSb with a low k value is employed as the multiplication layer to suppress device noise while maintaining sufficient gain. To facilitate carrier transport, the conduction band discontinuity is optimized by inserting an InAs/AlSb T2SLs stepped grading layer between the absorption and multiplication layers. As a result, the device exhibits excellent photoresponse at 8.4 μm at 100 K and maintains a low dark current density of 5.48 × 10−2 A/cm2. Specifically, it achieves a maximum gain of 366, a responsivity of 650 A/W, and a quantum efficiency of 26.28% under breakdown voltage. This design offers a promising solution for the advancement of LWIR detection. |
| format | Article |
| id | doaj-art-b93d38b2a64b4c64a0f037c2d7f642e1 |
| institution | OA Journals |
| issn | 2751-2606 2751-2614 |
| language | English |
| publishDate | 2024-11-01 |
| publisher | Wiley |
| record_format | Article |
| series | Electron |
| spelling | doaj-art-b93d38b2a64b4c64a0f037c2d7f642e12025-08-20T02:09:34ZengWileyElectron2751-26062751-26142024-11-0124n/an/a10.1002/elt2.73Design of long‐wavelength infrared InAs/InAsSb type‐II superlattice avalanche photodetector with stepped grading layerKeming Cheng0Kai Shen1Chuang Li2Daqian Guo3Hao Wang4Jiang Wu5Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu ChinaInstitute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu ChinaInstitute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu ChinaInstitute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu ChinaDivision of Electrical Engineering Department of Engineering University of Cambridge Cambridge UKInstitute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu ChinaAbstract Weak response in long‐wavelength infrared (LWIR) detection has long been a perennial concern, significantly limiting the reliability of applications. Avalanche photodetectors (APDs) offer excellent responsivity but are plagued by high dark current during the multiplication process. Here, we propose a high‐performance type‐II superlattices (T2SLs) LWIR APD to address these issues. The low Auger recombination rate of the InAs/InAsSb T2SLs absorption layer is exploited to reduce the dark current initially. AlAsSb with a low k value is employed as the multiplication layer to suppress device noise while maintaining sufficient gain. To facilitate carrier transport, the conduction band discontinuity is optimized by inserting an InAs/AlSb T2SLs stepped grading layer between the absorption and multiplication layers. As a result, the device exhibits excellent photoresponse at 8.4 μm at 100 K and maintains a low dark current density of 5.48 × 10−2 A/cm2. Specifically, it achieves a maximum gain of 366, a responsivity of 650 A/W, and a quantum efficiency of 26.28% under breakdown voltage. This design offers a promising solution for the advancement of LWIR detection.https://doi.org/10.1002/elt2.73AlAsSbavalanche photodetectorInAs/InAsSb type‐II superlattice |
| spellingShingle | Keming Cheng Kai Shen Chuang Li Daqian Guo Hao Wang Jiang Wu Design of long‐wavelength infrared InAs/InAsSb type‐II superlattice avalanche photodetector with stepped grading layer Electron AlAsSb avalanche photodetector InAs/InAsSb type‐II superlattice |
| title | Design of long‐wavelength infrared InAs/InAsSb type‐II superlattice avalanche photodetector with stepped grading layer |
| title_full | Design of long‐wavelength infrared InAs/InAsSb type‐II superlattice avalanche photodetector with stepped grading layer |
| title_fullStr | Design of long‐wavelength infrared InAs/InAsSb type‐II superlattice avalanche photodetector with stepped grading layer |
| title_full_unstemmed | Design of long‐wavelength infrared InAs/InAsSb type‐II superlattice avalanche photodetector with stepped grading layer |
| title_short | Design of long‐wavelength infrared InAs/InAsSb type‐II superlattice avalanche photodetector with stepped grading layer |
| title_sort | design of long wavelength infrared inas inassb type ii superlattice avalanche photodetector with stepped grading layer |
| topic | AlAsSb avalanche photodetector InAs/InAsSb type‐II superlattice |
| url | https://doi.org/10.1002/elt2.73 |
| work_keys_str_mv | AT kemingcheng designoflongwavelengthinfraredinasinassbtypeiisuperlatticeavalanchephotodetectorwithsteppedgradinglayer AT kaishen designoflongwavelengthinfraredinasinassbtypeiisuperlatticeavalanchephotodetectorwithsteppedgradinglayer AT chuangli designoflongwavelengthinfraredinasinassbtypeiisuperlatticeavalanchephotodetectorwithsteppedgradinglayer AT daqianguo designoflongwavelengthinfraredinasinassbtypeiisuperlatticeavalanchephotodetectorwithsteppedgradinglayer AT haowang designoflongwavelengthinfraredinasinassbtypeiisuperlatticeavalanchephotodetectorwithsteppedgradinglayer AT jiangwu designoflongwavelengthinfraredinasinassbtypeiisuperlatticeavalanchephotodetectorwithsteppedgradinglayer |