Design of long‐wavelength infrared InAs/InAsSb type‐II superlattice avalanche photodetector with stepped grading layer
Abstract Weak response in long‐wavelength infrared (LWIR) detection has long been a perennial concern, significantly limiting the reliability of applications. Avalanche photodetectors (APDs) offer excellent responsivity but are plagued by high dark current during the multiplication process. Here, we...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2024-11-01
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| Series: | Electron |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/elt2.73 |
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| Summary: | Abstract Weak response in long‐wavelength infrared (LWIR) detection has long been a perennial concern, significantly limiting the reliability of applications. Avalanche photodetectors (APDs) offer excellent responsivity but are plagued by high dark current during the multiplication process. Here, we propose a high‐performance type‐II superlattices (T2SLs) LWIR APD to address these issues. The low Auger recombination rate of the InAs/InAsSb T2SLs absorption layer is exploited to reduce the dark current initially. AlAsSb with a low k value is employed as the multiplication layer to suppress device noise while maintaining sufficient gain. To facilitate carrier transport, the conduction band discontinuity is optimized by inserting an InAs/AlSb T2SLs stepped grading layer between the absorption and multiplication layers. As a result, the device exhibits excellent photoresponse at 8.4 μm at 100 K and maintains a low dark current density of 5.48 × 10−2 A/cm2. Specifically, it achieves a maximum gain of 366, a responsivity of 650 A/W, and a quantum efficiency of 26.28% under breakdown voltage. This design offers a promising solution for the advancement of LWIR detection. |
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| ISSN: | 2751-2606 2751-2614 |