Temperature-Dependent Carrier Recombination and Efficiency Droop of AlGaN Deep Ultraviolet Light-Emitting Diodes

Temperature-Dependent Carrier Recombination and Efficiency Droop of AlGaN Deep Ultraviolet Light-Emitting Diodes

We investigate temperature-dependent carrier transfer and efficiency droop on AlGaN-based deep ultraviolet light-emitting diodes. The Shockley-Read-Hall (SRH) recombination and carrier leakage are highly associated with the poor thermal stability. The existence of Auger recombination and carrier lea...

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Bibliographic Details
Main Authors: Zhangbao Peng, Weijie Guo, Tingzhu Wu, Ziquan Guo, Yijun Lu, Yicheng Zheng, Yue Lin, Zhong Chen
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Photonics Journal
Subjects:
Deep ultraviolet light-emitting diodes
recombination mechanisms
efficiency droop
<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX">${ABC}$</tex-math> </inline-formula> model.
Online Access:https://ieeexplore.ieee.org/document/8928508/
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Summary:We investigate temperature-dependent carrier transfer and efficiency droop on AlGaN-based deep ultraviolet light-emitting diodes. The Shockley-Read-Hall (SRH) recombination and carrier leakage are highly associated with the poor thermal stability. The existence of Auger recombination and carrier leakage is identified by the m-power method. A modified <italic>ABC</italic> model with an additional term <italic>f</italic>(<italic>n</italic>) related to carrier leakage is employed to analyze the evolution of multiple recombination mechanisms. The SRH process strongly suppresses both Auger recombination and carrier leakage at low currents. At high currents, the latter two processes are responsible for the efficiency droop and exhibit an anti-correlation upon temperature.
ISSN:1943-0655

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