Mechanical Stress Analysis in High Power Press Pack IGBT
Mechanical stress is one of the key factors affecting the electrical characteristics, thermal characteristics and reliability of high-voltage high-power press-pack IGBT devices. First of all, in this paper, from the perspective of chip and package structure design, the research status and key design...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | zho |
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State Grid Energy Research Institute
2020-12-01
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| Series: | Zhongguo dianli |
| Subjects: | |
| Online Access: | https://www.electricpower.com.cn/CN/10.11930/j.issn.1004-9649.202005029 |
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| author | Xinling TANG Zhongkang LIN Xizi ZHANG Shumin YAN Bing SU Liang WANG Ronggang HAN Hao SHI |
| author_facet | Xinling TANG Zhongkang LIN Xizi ZHANG Shumin YAN Bing SU Liang WANG Ronggang HAN Hao SHI |
| author_sort | Xinling TANG |
| collection | DOAJ |
| description | Mechanical stress is one of the key factors affecting the electrical characteristics, thermal characteristics and reliability of high-voltage high-power press-pack IGBT devices. First of all, in this paper, from the perspective of chip and package structure design, the research status and key design techniques of the uniformity of the mechanical pressure distribution of single-chip and parallel multi-chip are introduced. Secondly, from the perspective of packaging technology, the influence of compliant contact, rigid contact and different soldering forms on the mechanical stress distribution of the chips are compared. Finally, combined with the characteristics of the press-pack structure, and based on a new type of edge termination structure, a new packaging technology solution is proposed, which can effectively improve the uniformity of the pressure of single chips and parallel chips, so as to provide a reference for the design of high-voltage high-power press-pack IGBT devices. |
| format | Article |
| id | doaj-art-b858d25cef844445b9d4ee8c1d88e251 |
| institution | DOAJ |
| issn | 1004-9649 |
| language | zho |
| publishDate | 2020-12-01 |
| publisher | State Grid Energy Research Institute |
| record_format | Article |
| series | Zhongguo dianli |
| spelling | doaj-art-b858d25cef844445b9d4ee8c1d88e2512025-08-20T02:59:19ZzhoState Grid Energy Research InstituteZhongguo dianli1004-96492020-12-015312627410.11930/j.issn.1004-9649.202005029zgdl-53-12-tangxinlingMechanical Stress Analysis in High Power Press Pack IGBTXinling TANG0Zhongkang LIN1Xizi ZHANG2Shumin YAN3Bing SU4Liang WANG5Ronggang HAN6Hao SHI7State Key Laboratory of Advanced Power Transmission Technology (Global Energy Interconnection Research Institute Co., Ltd.), Beijing 102209, ChinaState Key Laboratory of Advanced Power Transmission Technology (Global Energy Interconnection Research Institute Co., Ltd.), Beijing 102209, ChinaState Key Laboratory of Advanced Power Transmission Technology (Global Energy Interconnection Research Institute Co., Ltd.), Beijing 102209, ChinaDezhou Electric Power Supply Company, State Grid Shandong Electric Power Company, Dezhou 253000, ChinaDezhou Electric Power Supply Company, State Grid Shandong Electric Power Company, Dezhou 253000, ChinaState Key Laboratory of Advanced Power Transmission Technology (Global Energy Interconnection Research Institute Co., Ltd.), Beijing 102209, ChinaState Key Laboratory of Advanced Power Transmission Technology (Global Energy Interconnection Research Institute Co., Ltd.), Beijing 102209, ChinaState Key Laboratory of Advanced Power Transmission Technology (Global Energy Interconnection Research Institute Co., Ltd.), Beijing 102209, ChinaMechanical stress is one of the key factors affecting the electrical characteristics, thermal characteristics and reliability of high-voltage high-power press-pack IGBT devices. First of all, in this paper, from the perspective of chip and package structure design, the research status and key design techniques of the uniformity of the mechanical pressure distribution of single-chip and parallel multi-chip are introduced. Secondly, from the perspective of packaging technology, the influence of compliant contact, rigid contact and different soldering forms on the mechanical stress distribution of the chips are compared. Finally, combined with the characteristics of the press-pack structure, and based on a new type of edge termination structure, a new packaging technology solution is proposed, which can effectively improve the uniformity of the pressure of single chips and parallel chips, so as to provide a reference for the design of high-voltage high-power press-pack IGBT devices.https://www.electricpower.com.cn/CN/10.11930/j.issn.1004-9649.202005029igbtpress pack igbtmechanical stressdouble-side edge termination |
| spellingShingle | Xinling TANG Zhongkang LIN Xizi ZHANG Shumin YAN Bing SU Liang WANG Ronggang HAN Hao SHI Mechanical Stress Analysis in High Power Press Pack IGBT Zhongguo dianli igbt press pack igbt mechanical stress double-side edge termination |
| title | Mechanical Stress Analysis in High Power Press Pack IGBT |
| title_full | Mechanical Stress Analysis in High Power Press Pack IGBT |
| title_fullStr | Mechanical Stress Analysis in High Power Press Pack IGBT |
| title_full_unstemmed | Mechanical Stress Analysis in High Power Press Pack IGBT |
| title_short | Mechanical Stress Analysis in High Power Press Pack IGBT |
| title_sort | mechanical stress analysis in high power press pack igbt |
| topic | igbt press pack igbt mechanical stress double-side edge termination |
| url | https://www.electricpower.com.cn/CN/10.11930/j.issn.1004-9649.202005029 |
| work_keys_str_mv | AT xinlingtang mechanicalstressanalysisinhighpowerpresspackigbt AT zhongkanglin mechanicalstressanalysisinhighpowerpresspackigbt AT xizizhang mechanicalstressanalysisinhighpowerpresspackigbt AT shuminyan mechanicalstressanalysisinhighpowerpresspackigbt AT bingsu mechanicalstressanalysisinhighpowerpresspackigbt AT liangwang mechanicalstressanalysisinhighpowerpresspackigbt AT rongganghan mechanicalstressanalysisinhighpowerpresspackigbt AT haoshi mechanicalstressanalysisinhighpowerpresspackigbt |