Influence of humidity on the resistive switching of hexagonal boron nitride-based memristors
Abstract Two-dimensional material-based memristors have recently gained attention as components of future neuromorphic computing concepts. However, their surrounding atmosphere can influence their behavior. In this work, we investigate the resistive switching behavior of hexagonal boron nitride-base...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2025-05-01
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| Series: | npj 2D Materials and Applications |
| Online Access: | https://doi.org/10.1038/s41699-025-00566-0 |
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| author | Lukas Völkel Rana Walied Ahmad Alana Bestaeva Dennis Braun Sofia Cruces Jimin Lee Sergej Pasko Simonas Krotkus Michael Heuken Stephan Menzel Max C. Lemme |
| author_facet | Lukas Völkel Rana Walied Ahmad Alana Bestaeva Dennis Braun Sofia Cruces Jimin Lee Sergej Pasko Simonas Krotkus Michael Heuken Stephan Menzel Max C. Lemme |
| author_sort | Lukas Völkel |
| collection | DOAJ |
| description | Abstract Two-dimensional material-based memristors have recently gained attention as components of future neuromorphic computing concepts. However, their surrounding atmosphere can influence their behavior. In this work, we investigate the resistive switching behavior of hexagonal boron nitride-based memristors with active nickel electrodes under vacuum conditions. Our cells exhibit repeatable, bipolar, nonvolatile switching under voltage stress after initial forming, with a switching window >103 under ambient conditions. However, in a vacuum, the forming is suppressed, and hence, no switching is observed. Compact model simulations can reproduce the set kinetics of our cells under ambient conditions and predict highly suppressed resistive switching in a water-deficient environment, supporting the experimental results. Our findings have important implications for the application of h-BN-based memristors with electrochemically active electrodes, since semiconductor chips are typically processed under high vacuum conditions and encapsulated to protect them from atmospheric influences. |
| format | Article |
| id | doaj-art-b83c577e68264b8d9e67168b49c28ccb |
| institution | OA Journals |
| issn | 2397-7132 |
| language | English |
| publishDate | 2025-05-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj 2D Materials and Applications |
| spelling | doaj-art-b83c577e68264b8d9e67168b49c28ccb2025-08-20T02:32:03ZengNature Portfolionpj 2D Materials and Applications2397-71322025-05-01911610.1038/s41699-025-00566-0Influence of humidity on the resistive switching of hexagonal boron nitride-based memristorsLukas Völkel0Rana Walied Ahmad1Alana Bestaeva2Dennis Braun3Sofia Cruces4Jimin Lee5Sergej Pasko6Simonas Krotkus7Michael Heuken8Stephan Menzel9Max C. Lemme10Chair of Electronic Devices, RWTH Aachen UniversityJülich Aachen Research Alliance (JARA)-Fit and Peter Grünberg Institute (PGI-7), Forschungszentrum Jülich GmbHJülich Aachen Research Alliance (JARA)-Fit and Peter Grünberg Institute (PGI-7), Forschungszentrum Jülich GmbHChair of Electronic Devices, RWTH Aachen UniversityChair of Electronic Devices, RWTH Aachen UniversityChair of Electronic Devices, RWTH Aachen UniversityAIXTRON SEAIXTRON SEAIXTRON SEJülich Aachen Research Alliance (JARA)-Fit and Peter Grünberg Institute (PGI-7), Forschungszentrum Jülich GmbHChair of Electronic Devices, RWTH Aachen UniversityAbstract Two-dimensional material-based memristors have recently gained attention as components of future neuromorphic computing concepts. However, their surrounding atmosphere can influence their behavior. In this work, we investigate the resistive switching behavior of hexagonal boron nitride-based memristors with active nickel electrodes under vacuum conditions. Our cells exhibit repeatable, bipolar, nonvolatile switching under voltage stress after initial forming, with a switching window >103 under ambient conditions. However, in a vacuum, the forming is suppressed, and hence, no switching is observed. Compact model simulations can reproduce the set kinetics of our cells under ambient conditions and predict highly suppressed resistive switching in a water-deficient environment, supporting the experimental results. Our findings have important implications for the application of h-BN-based memristors with electrochemically active electrodes, since semiconductor chips are typically processed under high vacuum conditions and encapsulated to protect them from atmospheric influences.https://doi.org/10.1038/s41699-025-00566-0 |
| spellingShingle | Lukas Völkel Rana Walied Ahmad Alana Bestaeva Dennis Braun Sofia Cruces Jimin Lee Sergej Pasko Simonas Krotkus Michael Heuken Stephan Menzel Max C. Lemme Influence of humidity on the resistive switching of hexagonal boron nitride-based memristors npj 2D Materials and Applications |
| title | Influence of humidity on the resistive switching of hexagonal boron nitride-based memristors |
| title_full | Influence of humidity on the resistive switching of hexagonal boron nitride-based memristors |
| title_fullStr | Influence of humidity on the resistive switching of hexagonal boron nitride-based memristors |
| title_full_unstemmed | Influence of humidity on the resistive switching of hexagonal boron nitride-based memristors |
| title_short | Influence of humidity on the resistive switching of hexagonal boron nitride-based memristors |
| title_sort | influence of humidity on the resistive switching of hexagonal boron nitride based memristors |
| url | https://doi.org/10.1038/s41699-025-00566-0 |
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