Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear Radiation
The effect of high energy radiation on the energy gap of compound semiconductor Silicon Carbide (SiC) are viewed. Emphasis is placed on those effects which can be interpreted in terms of energy levels. The goal is to develop semiconductors operating at high temperature with low energy gaps by induce...
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University of Baghdad, College of Science for Women
2009-09-01
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| Series: | مجلة بغداد للعلوم |
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| Online Access: | http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/1018 |
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| author | Baghdad Science Journal |
| author_facet | Baghdad Science Journal |
| author_sort | Baghdad Science Journal |
| collection | DOAJ |
| description | The effect of high energy radiation on the energy gap of compound semiconductor Silicon Carbide (SiC) are viewed. Emphasis is placed on those effects which can be interpreted in terms of energy levels. The goal is to develop semiconductors operating at high temperature with low energy gaps by induced permanent damage in SiC irradiated by gamma source.
TEACO2 laser used for producing SiC thin films. Spectrophotometer lambda - UV, Visible instrument is used to determine energy gap (Eg). Co-60, Cs-137, and Sr-90 are used to irradiate SiC samples for different time of irradiation. Possible interpretation of the changing in Eg values as the time of irradiation change is discussed |
| format | Article |
| id | doaj-art-b772e44111df41e1b4340ec641acd7a4 |
| institution | Kabale University |
| issn | 2078-8665 2411-7986 |
| language | English |
| publishDate | 2009-09-01 |
| publisher | University of Baghdad, College of Science for Women |
| record_format | Article |
| series | مجلة بغداد للعلوم |
| spelling | doaj-art-b772e44111df41e1b4340ec641acd7a42025-08-20T03:35:54ZengUniversity of Baghdad, College of Science for Womenمجلة بغداد للعلوم2078-86652411-79862009-09-016310.21123/bsj.6.3.578-583Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear RadiationBaghdad Science JournalThe effect of high energy radiation on the energy gap of compound semiconductor Silicon Carbide (SiC) are viewed. Emphasis is placed on those effects which can be interpreted in terms of energy levels. The goal is to develop semiconductors operating at high temperature with low energy gaps by induced permanent damage in SiC irradiated by gamma source. TEACO2 laser used for producing SiC thin films. Spectrophotometer lambda - UV, Visible instrument is used to determine energy gap (Eg). Co-60, Cs-137, and Sr-90 are used to irradiate SiC samples for different time of irradiation. Possible interpretation of the changing in Eg values as the time of irradiation change is discussedhttp://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/1018"Nuclear radiation , Band gap energy, SiC thin film" |
| spellingShingle | Baghdad Science Journal Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear Radiation مجلة بغداد للعلوم "Nuclear radiation , Band gap energy, SiC thin film" |
| title | Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear Radiation |
| title_full | Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear Radiation |
| title_fullStr | Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear Radiation |
| title_full_unstemmed | Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear Radiation |
| title_short | Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear Radiation |
| title_sort | band gap energy for sic thin films prepared by teaco2 laser irradiated with nuclear radiation |
| topic | "Nuclear radiation , Band gap energy, SiC thin film" |
| url | http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/1018 |
| work_keys_str_mv | AT baghdadsciencejournal bandgapenergyforsicthinfilmspreparedbyteaco2laserirradiatedwithnuclearradiation |