Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear Radiation

The effect of high energy radiation on the energy gap of compound semiconductor Silicon Carbide (SiC) are viewed. Emphasis is placed on those effects which can be interpreted in terms of energy levels. The goal is to develop semiconductors operating at high temperature with low energy gaps by induce...

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Main Author: Baghdad Science Journal
Format: Article
Language:English
Published: University of Baghdad, College of Science for Women 2009-09-01
Series:مجلة بغداد للعلوم
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Online Access:http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/1018
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author Baghdad Science Journal
author_facet Baghdad Science Journal
author_sort Baghdad Science Journal
collection DOAJ
description The effect of high energy radiation on the energy gap of compound semiconductor Silicon Carbide (SiC) are viewed. Emphasis is placed on those effects which can be interpreted in terms of energy levels. The goal is to develop semiconductors operating at high temperature with low energy gaps by induced permanent damage in SiC irradiated by gamma source. TEACO2 laser used for producing SiC thin films. Spectrophotometer lambda - UV, Visible instrument is used to determine energy gap (Eg). Co-60, Cs-137, and Sr-90 are used to irradiate SiC samples for different time of irradiation. Possible interpretation of the changing in Eg values as the time of irradiation change is discussed
format Article
id doaj-art-b772e44111df41e1b4340ec641acd7a4
institution Kabale University
issn 2078-8665
2411-7986
language English
publishDate 2009-09-01
publisher University of Baghdad, College of Science for Women
record_format Article
series مجلة بغداد للعلوم
spelling doaj-art-b772e44111df41e1b4340ec641acd7a42025-08-20T03:35:54ZengUniversity of Baghdad, College of Science for Womenمجلة بغداد للعلوم2078-86652411-79862009-09-016310.21123/bsj.6.3.578-583Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear RadiationBaghdad Science JournalThe effect of high energy radiation on the energy gap of compound semiconductor Silicon Carbide (SiC) are viewed. Emphasis is placed on those effects which can be interpreted in terms of energy levels. The goal is to develop semiconductors operating at high temperature with low energy gaps by induced permanent damage in SiC irradiated by gamma source. TEACO2 laser used for producing SiC thin films. Spectrophotometer lambda - UV, Visible instrument is used to determine energy gap (Eg). Co-60, Cs-137, and Sr-90 are used to irradiate SiC samples for different time of irradiation. Possible interpretation of the changing in Eg values as the time of irradiation change is discussedhttp://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/1018"Nuclear radiation , Band gap energy, SiC thin film"
spellingShingle Baghdad Science Journal
Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear Radiation
مجلة بغداد للعلوم
"Nuclear radiation , Band gap energy, SiC thin film"
title Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear Radiation
title_full Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear Radiation
title_fullStr Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear Radiation
title_full_unstemmed Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear Radiation
title_short Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear Radiation
title_sort band gap energy for sic thin films prepared by teaco2 laser irradiated with nuclear radiation
topic "Nuclear radiation , Band gap energy, SiC thin film"
url http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/1018
work_keys_str_mv AT baghdadsciencejournal bandgapenergyforsicthinfilmspreparedbyteaco2laserirradiatedwithnuclearradiation