EPITAXIAL FILMS OF ZINC SELENIDE ON POROUS SILICON
ZnSe epitaxial films are grown on (111)- and (100)-oriented Si substrates with a porous buffer layer by the thermal evaporation of ZnSe compound. The crystal structure of the deposited films was controlled by X-ray diffraction. The morphology of the films was studied by high-resolution scanning elec...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
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| Online Access: | https://doklady.bsuir.by/jour/article/view/559 |
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| _version_ | 1849400690610274304 |
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| author | V. I. Levchenko L. I. Postnova E. L. Trukhanava V. P. Bondarenko |
| author_facet | V. I. Levchenko L. I. Postnova E. L. Trukhanava V. P. Bondarenko |
| author_sort | V. I. Levchenko |
| collection | DOAJ |
| description | ZnSe epitaxial films are grown on (111)- and (100)-oriented Si substrates with a porous buffer layer by the thermal evaporation of ZnSe compound. The crystal structure of the deposited films was controlled by X-ray diffraction. The morphology of the films was studied by high-resolution scanning electron microscopy. It was demonstrated the porous buffer layer provides improving the quality of the films compared with films deposited on the monolithic silicon. |
| format | Article |
| id | doaj-art-b7105b122d774bccac0f4a1f59682ecd |
| institution | Kabale University |
| issn | 1729-7648 |
| language | Russian |
| publishDate | 2019-06-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj-art-b7105b122d774bccac0f4a1f59682ecd2025-08-20T03:37:56ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-0106100102558EPITAXIAL FILMS OF ZINC SELENIDE ON POROUS SILICONV. I. Levchenko0L. I. Postnova1E. L. Trukhanava2V. P. Bondarenko3ГО «НПЦ НАН Беларуси по материаловедению»ГО «НПЦ НАН Беларуси по материаловедению»ГО «НПЦ НАН Беларуси по материаловедению»Белорусский государственный университет информатики и радиоэлектроникиZnSe epitaxial films are grown on (111)- and (100)-oriented Si substrates with a porous buffer layer by the thermal evaporation of ZnSe compound. The crystal structure of the deposited films was controlled by X-ray diffraction. The morphology of the films was studied by high-resolution scanning electron microscopy. It was demonstrated the porous buffer layer provides improving the quality of the films compared with films deposited on the monolithic silicon.https://doklady.bsuir.by/jour/article/view/559эпитаксиальные пленкиселенид цинкапористый кремний |
| spellingShingle | V. I. Levchenko L. I. Postnova E. L. Trukhanava V. P. Bondarenko EPITAXIAL FILMS OF ZINC SELENIDE ON POROUS SILICON Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki эпитаксиальные пленки селенид цинка пористый кремний |
| title | EPITAXIAL FILMS OF ZINC SELENIDE ON POROUS SILICON |
| title_full | EPITAXIAL FILMS OF ZINC SELENIDE ON POROUS SILICON |
| title_fullStr | EPITAXIAL FILMS OF ZINC SELENIDE ON POROUS SILICON |
| title_full_unstemmed | EPITAXIAL FILMS OF ZINC SELENIDE ON POROUS SILICON |
| title_short | EPITAXIAL FILMS OF ZINC SELENIDE ON POROUS SILICON |
| title_sort | epitaxial films of zinc selenide on porous silicon |
| topic | эпитаксиальные пленки селенид цинка пористый кремний |
| url | https://doklady.bsuir.by/jour/article/view/559 |
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