Thermal Effect and Frequency Response Analyses on Heterojunction Bipolar Power Transistor
Heterojunction bipolar transistors (HBT) based on Npn AlGaAs/GaAs material system have attracted considerable attention for microwave power and digital applications due to their high speed and high current capabilities. In this paper, a numerical model based on the Npn AlGaAs/GaAs HBT structure for...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2001-01-01
|
| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2001/78036 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Be the first to leave a comment!