Thermal Effect and Frequency Response Analyses on Heterojunction Bipolar Power Transistor
Heterojunction bipolar transistors (HBT) based on Npn AlGaAs/GaAs material system have attracted considerable attention for microwave power and digital applications due to their high speed and high current capabilities. In this paper, a numerical model based on the Npn AlGaAs/GaAs HBT structure for...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2001-01-01
|
| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2001/78036 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850160279603642368 |
|---|---|
| author | K. F. Yarn K. H. Ho |
| author_facet | K. F. Yarn K. H. Ho |
| author_sort | K. F. Yarn |
| collection | DOAJ |
| description | Heterojunction bipolar transistors (HBT) based on Npn AlGaAs/GaAs material system
have attracted considerable attention for microwave power and digital applications due
to their high speed and high current capabilities. In this paper, a numerical model based
on the Npn AlGaAs/GaAs HBT structure for the carrier transport is presented. Three
figures of merit on device operation, current gain, cut-off frequency and maximum
oscillation frequency are calculated. Besides, thermal instability plays an important
role on power HBT resulted from the low thermal conductivity in GaAs. The
generated heat will increase the junction temperature and cause self-destruction.
Therefore, the thermal runaway study of the junction temperature, current–voltage
(IV) characteristics and frequency response using an analytical thermal model is
described. |
| format | Article |
| id | doaj-art-b682ad7835db45d2ba5f94aff90c5277 |
| institution | OA Journals |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2001-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-b682ad7835db45d2ba5f94aff90c52772025-08-20T02:23:11ZengWileyActive and Passive Electronic Components0882-75161563-50312001-01-0124426528710.1155/2001/78036Thermal Effect and Frequency Response Analyses on Heterojunction Bipolar Power TransistorK. F. Yarn0K. H. Ho1Optoelectronic Semiconductor Center, Department of Electrical Engineering, Far East College, Hsin-Shih, Taiwan 744, Tainan, Chinalnstitute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Taiwan 701, Tainan, ChinaHeterojunction bipolar transistors (HBT) based on Npn AlGaAs/GaAs material system have attracted considerable attention for microwave power and digital applications due to their high speed and high current capabilities. In this paper, a numerical model based on the Npn AlGaAs/GaAs HBT structure for the carrier transport is presented. Three figures of merit on device operation, current gain, cut-off frequency and maximum oscillation frequency are calculated. Besides, thermal instability plays an important role on power HBT resulted from the low thermal conductivity in GaAs. The generated heat will increase the junction temperature and cause self-destruction. Therefore, the thermal runaway study of the junction temperature, current–voltage (IV) characteristics and frequency response using an analytical thermal model is described.http://dx.doi.org/10.1155/2001/78036 |
| spellingShingle | K. F. Yarn K. H. Ho Thermal Effect and Frequency Response Analyses on Heterojunction Bipolar Power Transistor Active and Passive Electronic Components |
| title | Thermal Effect and Frequency Response Analyses on Heterojunction Bipolar Power Transistor |
| title_full | Thermal Effect and Frequency Response Analyses on Heterojunction Bipolar Power Transistor |
| title_fullStr | Thermal Effect and Frequency Response Analyses on Heterojunction Bipolar Power Transistor |
| title_full_unstemmed | Thermal Effect and Frequency Response Analyses on Heterojunction Bipolar Power Transistor |
| title_short | Thermal Effect and Frequency Response Analyses on Heterojunction Bipolar Power Transistor |
| title_sort | thermal effect and frequency response analyses on heterojunction bipolar power transistor |
| url | http://dx.doi.org/10.1155/2001/78036 |
| work_keys_str_mv | AT kfyarn thermaleffectandfrequencyresponseanalysesonheterojunctionbipolarpowertransistor AT khho thermaleffectandfrequencyresponseanalysesonheterojunctionbipolarpowertransistor |