Thermal Effect and Frequency Response Analyses on Heterojunction Bipolar Power Transistor
Heterojunction bipolar transistors (HBT) based on Npn AlGaAs/GaAs material system have attracted considerable attention for microwave power and digital applications due to their high speed and high current capabilities. In this paper, a numerical model based on the Npn AlGaAs/GaAs HBT structure for...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2001-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2001/78036 |
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| Summary: | Heterojunction bipolar transistors (HBT) based on Npn AlGaAs/GaAs material system
have attracted considerable attention for microwave power and digital applications due
to their high speed and high current capabilities. In this paper, a numerical model based
on the Npn AlGaAs/GaAs HBT structure for the carrier transport is presented. Three
figures of merit on device operation, current gain, cut-off frequency and maximum
oscillation frequency are calculated. Besides, thermal instability plays an important
role on power HBT resulted from the low thermal conductivity in GaAs. The
generated heat will increase the junction temperature and cause self-destruction.
Therefore, the thermal runaway study of the junction temperature, current–voltage
(IV) characteristics and frequency response using an analytical thermal model is
described. |
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| ISSN: | 0882-7516 1563-5031 |