Generation of Pulsed Laser Radiation at 1002 nm with a Quantum Defect of 2.6%
Low-quantum-defect pulsed oscillation at 1002 nm was achieved with a Yb:LuPO<sub>4</sub> miniature crystal rod laser longitudinally pumped by a 976-nm diode laser, with a GaAs semiconductor saturable absorber to induce passive Q-switching. With 17.2 W of pump power absorbed in the crysta...
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| Format: | Article |
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IEEE
2017-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/7927412/ |
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| author | Xiaodan Dou Lisha Wang Yanjun Ma Wenjuan Han Honghao Xu Degao Zhong Bing Teng Junhai Liu |
| author_facet | Xiaodan Dou Lisha Wang Yanjun Ma Wenjuan Han Honghao Xu Degao Zhong Bing Teng Junhai Liu |
| author_sort | Xiaodan Dou |
| collection | DOAJ |
| description | Low-quantum-defect pulsed oscillation at 1002 nm was achieved with a Yb:LuPO<sub>4</sub> miniature crystal rod laser longitudinally pumped by a 976-nm diode laser, with a GaAs semiconductor saturable absorber to induce passive Q-switching. With 17.2 W of pump power absorbed in the crystal rod, an average output power of 0.85 W was generated at a repetition rate of 3.7 kHz, the resulting pulse energy, duration, and peak power were 230 μJ, 5.5 ns, and 41.8 kW, respectively. |
| format | Article |
| id | doaj-art-b5e4f2ecfc8a490d9a9a5702941803a0 |
| institution | Kabale University |
| issn | 1943-0655 |
| language | English |
| publishDate | 2017-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-b5e4f2ecfc8a490d9a9a5702941803a02025-08-20T03:30:56ZengIEEEIEEE Photonics Journal1943-06552017-01-01931810.1109/JPHOT.2017.27037827927412Generation of Pulsed Laser Radiation at 1002 nm with a Quantum Defect of 2.6%Xiaodan Dou0Lisha Wang1Yanjun Ma2Wenjuan Han3Honghao Xu4Degao Zhong5Bing Teng6Junhai Liu7College of Physics, Qingdao University, Qingdao, ChinaCollege of Physics, Qingdao University, Qingdao, ChinaCollege of Physics, Qingdao University, Qingdao, ChinaCollege of Physics, Qingdao University, Qingdao, ChinaCollege of Physics, Qingdao University, Qingdao, ChinaCollege of Physics, Qingdao University, Qingdao, ChinaCollege of Physics, Qingdao University, Qingdao, ChinaCollege of Physics, Qingdao University, Qingdao, ChinaLow-quantum-defect pulsed oscillation at 1002 nm was achieved with a Yb:LuPO<sub>4</sub> miniature crystal rod laser longitudinally pumped by a 976-nm diode laser, with a GaAs semiconductor saturable absorber to induce passive Q-switching. With 17.2 W of pump power absorbed in the crystal rod, an average output power of 0.85 W was generated at a repetition rate of 3.7 kHz, the resulting pulse energy, duration, and peak power were 230 μJ, 5.5 ns, and 41.8 kW, respectively.https://ieeexplore.ieee.org/document/7927412/Yb laserQ-switchedYb:LuPO<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">4</sub> crystalGaAs saturable absorber. |
| spellingShingle | Xiaodan Dou Lisha Wang Yanjun Ma Wenjuan Han Honghao Xu Degao Zhong Bing Teng Junhai Liu Generation of Pulsed Laser Radiation at 1002 nm with a Quantum Defect of 2.6% IEEE Photonics Journal Yb laser Q-switched Yb:LuPO<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">4</sub> crystal GaAs saturable absorber. |
| title | Generation of Pulsed Laser Radiation at 1002 nm with a Quantum Defect of 2.6% |
| title_full | Generation of Pulsed Laser Radiation at 1002 nm with a Quantum Defect of 2.6% |
| title_fullStr | Generation of Pulsed Laser Radiation at 1002 nm with a Quantum Defect of 2.6% |
| title_full_unstemmed | Generation of Pulsed Laser Radiation at 1002 nm with a Quantum Defect of 2.6% |
| title_short | Generation of Pulsed Laser Radiation at 1002 nm with a Quantum Defect of 2.6% |
| title_sort | generation of pulsed laser radiation at 1002 nm with a quantum defect of 2 6 x0025 |
| topic | Yb laser Q-switched Yb:LuPO<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">4</sub> crystal GaAs saturable absorber. |
| url | https://ieeexplore.ieee.org/document/7927412/ |
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